IRLI3705NPBF - Даташиты. Аналоги. Основные параметры

PD- 95427A IRLI3705NPbF Lead-Free www.irf.com 1 10/27/04 IRLI3705NPbF 2 www.irf.com IRLI3705NPbF www.irf.com 3 IRLI3705NPbF 4 www.irf.com IRLI3705NPbF www.irf.com 5 IRLI3705NPbF 6 www.irf.com IRLI3705NPbF www.irf.com 7 IRLI3705NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XAMP L E T

PD - 9.1369B IRLI3705N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.01 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 52A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRLI3705 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

PD - 94390 IRLI3615 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.085 Fast Switching G Fully Avalanche Rated ID = 14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p

PD - _____ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.026 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID = 25A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Ultra Low On-Resistance Isolated Package RDS(on) = 0.006 High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mm ID = 76A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.014 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID = 38A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

PD- 95642 IRLI3803PbF Lead-Free www.irf.com 1 7/26/04 IRLI3803PbF 2 www.irf.com IRLI3803PbF www.irf.com 3 IRLI3803PbF 4 www.irf.com IRLI3803PbF www.irf.com 5 IRLI3803PbF 6 www.irf.com IRLI3803PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

IRLI3615P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.058 Low-Profile Through-Hole Qg (Max.) (nC) 64 Available in Tape and Reel Qgs (nC) 12 Dynamic dV/dt Rating 150 C Operating Temperature Qgd (nC) 30 Fast Switching Confi

IRLI3803P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.004 at VGS = 10 V 98 30 82 nC 0.005 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220 FULLPAK D Server DC/DC G S S D G N-Channel MOSFET Top Vi