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IRLI3803PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRLI3803PBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 63 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 16 V

Пороговое напряжение включения Ugs(th): 1 V

Максимально допустимый постоянный ток стока (Id): 76 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 140 nC

Время нарастания (tr): 230 ns

Выходная емкость (Cd): 1800 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.006 Ohm

Тип корпуса: TO220F

Аналог (замена) для IRLI3803PBF

 

IRLI3803PBF Datasheet (PDF)

1.1. irli3803pbf.pdf Size:1461K _upd

IRLI3803PBF
IRLI3803PBF

PD- 95642 IRLI3803PbF • Lead-Free www.irf.com 1 7/26/04 IRLI3803PbF 2 www.irf.com IRLI3803PbF www.irf.com 3 IRLI3803PbF 4 www.irf.com IRLI3803PbF www.irf.com 5 IRLI3803PbF 6 www.irf.com IRLI3803PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - +

2.1. irli3803.pdf Size:103K _international_rectifier

IRLI3803PBF
IRLI3803PBF

PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Ultra Low On-Resistance Isolated Package RDS(on) = 0.006? High Voltage Isolation = 2.5KVRMS G Sink to Lead Creepage Dist. = 4.8mm ID = 76A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

 5.1. irli3705npbf.pdf Size:1363K _upd

IRLI3803PBF
IRLI3803PBF

PD- 95427A IRLI3705NPbF • Lead-Free www.irf.com 1 10/27/04 IRLI3705NPbF 2 www.irf.com IRLI3705NPbF www.irf.com 3 IRLI3705NPbF 4 www.irf.com IRLI3705NPbF www.irf.com 5 IRLI3705NPbF 6 www.irf.com IRLI3705NPbF www.irf.com 7 IRLI3705NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XAMP L E : T

5.2. irli3103.pdf Size:151K _international_rectifier

IRLI3803PBF
IRLI3803PBF

PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.014? Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID = 38A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r

 5.3. irli3303.pdf Size:154K _international_rectifier

IRLI3803PBF
IRLI3803PBF

PD - _____ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology VDSS = 30V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.026? Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID = 25A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possib

5.4. irli3615.pdf Size:100K _international_rectifier

IRLI3803PBF
IRLI3803PBF

PD - 94390 IRLI3615 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.085 ? Fast Switching G Fully Avalanche Rated ID = 14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

 5.5. irli3705n.pdf Size:107K _international_rectifier

IRLI3803PBF
IRLI3803PBF

PD - 9.1369B IRLI3705N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.01? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 52A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

Другие MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 

 
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