IRFL110 - Даташиты. Аналоги. Основные параметры

PD - 95317IRFL110PbFHEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive Requirements Lead-FreeID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fast

PD - 90861AIRFL110HEXFET Power MOSFET Surface MountD Available in Tape & ReelVDSS = 100V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast SwitchingRDS(on) = 0.54 Ease of ParallelingG Simple Drive RequirementsID = 1.5ASDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, rug

IRFL110, SiHFL110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and ReelQg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 Fast SwitchingQgd (nC) 3.8 Ease of Paralleling Simple Drive R

IRFL110TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET AB

PD - 95316IRFL1006PbFHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 60V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.22 Fully Avalanche RatedG Lead-FreeID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefi

PD - 91876IRFL1006HEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 60V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.22 Fully Avalanche RatedGID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined wi