IRF7701. Аналоги и основные параметры
Наименование производителя: IRF7701
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1520 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: TSSOP8
Аналог (замена) для IRF7701
- подборⓘ MOSFET транзистора по параметрам
IRF7701 даташит
..1. Size:141K international rectifier
irf7701.pdf 
PD - 93940 IRF7701 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET 0.011@VGS = -4.5V -10A Very Small SOIC Package -12V 0.015@VGS = -2.5V -8.5A Low Profile (
0.1. Size:236K international rectifier
irf7701gpbf.pdf 
PD - 96146A IRF7701GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package 0.011@VGS = -4.5V -10A l Low Profile (
8.1. Size:234K international rectifier
irf7705gpbf.pdf 
PD- 96142A IRF7705GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Very Small SOIC Package -30V 18 @VGS = -10V -8.0A l Low Profile (
8.2. Size:234K international rectifier
irf7705pbf.pdf 
PD-96022A IRF7705PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 18 @VGS = -10V -8.0A l Very Small SOIC Package 30 @VGS = -4.5V -6.0A l Low Profile (
8.3. Size:193K international rectifier
irf7704.pdf 
PD- 94160 IRF7704 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -40V 46@VGS = -10V -4.6A Very Small SOIC Package 74@VGS = -4.5V -3.7A Low Profile (
8.4. Size:146K international rectifier
irf7705.pdf 
PD - 94001A IRF7705 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -30V 18 @VGS = -10V -8.0A Very Small SOIC Package 30 @VGS = -4.5V -6.0A Low Profile (
8.5. Size:138K international rectifier
irf7702.pdf 
PD - 93849C PROVISIONAL IRF7702 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID -1.8V Rated 0.014@VGS = -4.5V -8.0A P-Channel MOSFET -12V 0.019@VGS = -2.5V -7.0A Very Small SOIC Package 0.027@VGS = -1.8V -5.8A Low Profile (
8.6. Size:210K international rectifier
irf7703.pdf 
PD - 94221 B IRF7703 HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 28@VGS = -10V -6.0A l Very Small SOIC Package 45@VGS = -4.5V -4.8A l Low Profile (
8.7. Size:234K international rectifier
irf7706gpbf.pdf 
PD-96143A IRF7706GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package -30V 22m @VGS = -10V -7.0A l Low Profile (
8.8. Size:151K international rectifier
irf7707.pdf 
PD -93996 IRF7707 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -20V 22m @VGS = -4.5V -7.0A Very Small SOIC Package 33m @VGS = -2.5V -6.0A Low Profile (
8.9. Size:227K international rectifier
irf7702gpbf.pdf 
PD- 96147 IRF7702GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l -1.8V Rated 0.014@VGS = -4.5V -8.0A l P-Channel MOSFET -12V 0.019@VGS = -2.5V -7.0A l Very Small SOIC Package 0.027@VGS = -1.8V -5.8A l Low Profile (
8.10. Size:184K international rectifier
irf7702pbf.pdf 
PD-96027 IRF7702PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l -1.8V Rated 0.014@VGS = -4.5V -8.0A l P-Channel MOSFET -12V 0.019@VGS = -2.5V -7.0A l Very Small SOIC Package 0.027@VGS = -1.8V -5.8A l Low Profile (
8.11. Size:237K international rectifier
irf7703pbf.pdf 
PD-96026A IRF7703PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 28@VGS = -10V -6.0A l Very Small SOIC Package 45@VGS = -4.5V -4.8A l Low Profile (
8.12. Size:241K international rectifier
irf7700gpbf.pdf 
PD - 96155A IRF7700GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -20V 0.015@VGS = -4.5V -8.6A l Very Small SOIC Package 0.024@VGS = -2.5V -7.3A l Low Profile (
8.13. Size:149K international rectifier
irf7700.pdf 
PD - 93894A IRF7700 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -20V 0.015@VGS = -4.5V -8.6A Very Small SOIC Package 0.024@VGS = -2.5V -7.3A Low Profile (
8.14. Size:237K international rectifier
irf7703gpbf.pdf 
PD- 96148A IRF7703GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET VDSS RDS(on) max (mW) ID l Very Small SOIC Package -40V 28@VGS = -10V -6.0A l Low Profile (
8.15. Size:244K international rectifier
irf7704pbf.pdf 
PD- 96025A IRF7704PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 46@VGS = -10V -4.6A l Very Small SOIC Package 74@VGS = -4.5V -3.7A l Low Profile (
8.16. Size:152K international rectifier
irf7706.pdf 
PD -94003 IRF7706 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -30V 22m @VGS = -10V -7.0A Very Small SOIC Package 36m @VGS = -4.5V -5.6A Low Profile (
8.17. Size:238K international rectifier
irf7706pbf.pdf 
PD-96023A IRF7706PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -30V 22m @VGS = -10V -7.0A l Very Small SOIC Package 36m @VGS = -4.5V -5.6A l Low Profile (
8.18. Size:245K international rectifier
irf7704gpbf.pdf 
PD-96149 IRF7704GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 46@VGS = -10V -4.6A l Very Small SOIC Package 74@VGS = -4.5V -3.7A l Low Profile (
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History: 2SK3512L
