Справочник MOSFET. IRFR7446PBF

 

IRFR7446PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR7446PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 98 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 65 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 480 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRFR7446PBF

 

 

IRFR7446PBF Datasheet (PDF)

 ..1. Size:272K  international rectifier
 irfr7446pbf.pdf

IRFR7446PBF IRFR7446PBF

StrongIRFETIRFR7446PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl PWM Inverterized topologiesD VDSS40Vl Battery powered circuitsRDS(on) typ.3.0ml Half-bridge and full-bridge topologies max. 3.9ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited)120Al OR-ing

 ..2. Size:272K  infineon
 irfr7446pbf.pdf

IRFR7446PBF IRFR7446PBF

StrongIRFETIRFR7446PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl PWM Inverterized topologiesD VDSS40Vl Battery powered circuitsRDS(on) typ.3.0ml Half-bridge and full-bridge topologies max. 3.9ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited)120Al OR-ing

 6.1. Size:242K  inchange semiconductor
 irfr7446.pdf

IRFR7446PBF IRFR7446PBF

isc N-Channel MOSFET Transistor IRFR7446, IIRFR7446FEATURESStatic drain-source on-resistance:RDS(on)3.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 7.1. Size:292K  international rectifier
 irfr7440pbf irfu7440pbf.pdf

IRFR7446PBF IRFR7446PBF

StrongIRFETIRFR7440PbFIRFU7440PbFHEXFET Power MOSFETApplicationsDVDSS 40Vl Brushed Motor drive applicationsl BLDC Motor drive applicationsRDS(on) typ. 1.9ml PWM Inverterized topologies max. 2.4ml Battery powered circuits GID (Silicon Limited) 180Al Half-bridge and full-bridge topologiesl Electronic ballast applicationsID (Package Limited) 90A Sl Sy

 7.2. Size:292K  infineon
 irfr7440pbf irfu7440pbf.pdf

IRFR7446PBF IRFR7446PBF

StrongIRFETIRFR7440PbFIRFU7440PbFHEXFET Power MOSFETApplicationsDVDSS 40Vl Brushed Motor drive applicationsl BLDC Motor drive applicationsRDS(on) typ. 1.9ml PWM Inverterized topologies max. 2.4ml Battery powered circuits GID (Silicon Limited) 180Al Half-bridge and full-bridge topologiesl Electronic ballast applicationsID (Package Limited) 90A Sl Sy

 7.3. Size:242K  inchange semiconductor
 irfr7440.pdf

IRFR7446PBF IRFR7446PBF

isc N-Channel MOSFET Transistor IRFR7440, IIRFR7440FEATURESStatic drain-source on-resistance:RDS(on)2.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

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