IRLR3802PBF - описание и поиск аналогов

 ..1. Size:281K  international rectifier
 irlr3802pbf irlu3802pbf.pdf 

PD - 95089A IRLR3802PbF IRLU3802PbF HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Point- VDSS RDS(on) max Qg of-Load Synchronous Buck Converters 12V 8.5m 27nC l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current D-Pak I-

 6.1. Size:143K  international rectifier
 irlr3802.pdf 

PD - 94536 IRLR3802 IRLU3802 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Point- VDSS RDS(on) max Qg of-Load Synchronous Buck Converters 12V 8.5m 27nC l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRLR3802 IRLU38

 6.2. Size:242K  inchange semiconductor
 irlr3802.pdf 

isc N-Channel MOSFET Transistor IRLR3802, IIRLR3802 FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 12 V DSS V Gate

 9.1. Size:122K  international rectifier
 irlr3715.pdf 

PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage

 9.2. Size:246K  international rectifier
 auirlr3410trl.pdf 

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica

 9.3. Size:286K  international rectifier
 irlu3103pbf irlr3103pbf.pdf 

PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

 9.4. Size:297K  international rectifier
 irlr3715zcpbf irlu3715zcpbf.pdf 

PD - 96053 IRLR3715ZCPbF IRLU3715ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pa

 9.5. Size:383K  international rectifier
 irlr3636pbf irlu3636pbf.pdf 

PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level

 9.6. Size:115K  international rectifier
 irlr3714 irlu3714.pdf 

PD - 94266 IRLR3714 SMPS MOSFET IRLU3714 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag

 9.7. Size:266K  international rectifier
 irlr3717pbf irlu3717pbf.pdf 

PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l

 9.8. Size:228K  international rectifier
 auirlr3915.pdf 

PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R

 9.9. Size:322K  international rectifier
 irlr3105pbf irlu3105pbf.pdf 

PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature Fast Switching RDS(on) = 0.037 G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 25A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie

 9.10. Size:271K  international rectifier
 irlu3715pbf irlr3715pbf.pdf 

PD - 95555A SMPS MOSFET IRLR3715PbF IRLU3715PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak

 9.11. Size:286K  international rectifier
 irlr3103pbf irlu3103pbf.pdf 

PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

 9.12. Size:285K  international rectifier
 irlr3410pbf irlu3410pbf.pdf 

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 9.13. Size:317K  international rectifier
 irlr3110zpbf irlu3110zpbf.pdf 

PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to

 9.14. Size:204K  international rectifier
 irlr3715z.pdf 

PD - 94650A IRLR3715Z IRLU3715Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l Fully Characteriz

 9.15. Size:222K  international rectifier
 irlu3714pbf irlr3714pbf.pdf 

PD - 95554A IRLR3714PbF SMPS MOSFET IRLU3714PbF HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak

 9.16. Size:310K  international rectifier
 irlu3303pbf irlr3303pbf.pdf 

PD- 95086A IRLR/U3303PbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Ultra Low On-Resistance VDSS = 30V l Surface Mount (IRLR3303) l Straight Lead (IRLU3303) RDS(on) = 0.031 l Advanced Process Technology G l Fast Switching l Fully Avalanche Rated ID = 35A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t

 9.17. Size:315K  international rectifier
 irlu3114zpbf irlr3114zpbf.pdf 

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance

 9.18. Size:139K  international rectifier
 irlr3303.pdf 

PD- 91316F IRLR/U3303 HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR3303) Straight Lead (IRLU3303) RDS(on) = 0.031 G Advanced Process Technology Fast Switching ID = 35A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the l

 9.19. Size:158K  international rectifier
 irlr3410.pdf 

PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive D Ultra Low On-Resistance VDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410) RDS(on) = 0.105 Advanced Process Technology G Fast Switching ID = 17A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

 9.20. Size:204K  international rectifier
 irlr3103.pdf 

PD - 91333E IRLR/U3103 HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR3103) Straight Lead (IRLU3103) RDS(on) = 0.019 Advanced Process Technology G Fast Switching ID = 55A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

 9.21. Size:315K  international rectifier
 irlr3114zpbf irlu3114zpbf.pdf 

PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance

 9.22. Size:266K  international rectifier
 irlu3717pbf irlr3717pbf.pdf 

PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l

 9.23. Size:340K  international rectifier
 irlr3705zpbf irlu3705zpbf.pdf 

PD - 95956A IRLR3705ZPbF IRLU3705ZPbF Features Logic Level Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel

 9.24. Size:383K  international rectifier
 irlu3636pbf irlr3636pbf.pdf 

PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level

 9.25. Size:317K  international rectifier
 irlu3110zpbf irlr3110zpbf.pdf 

PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to

 9.26. Size:324K  international rectifier
 irlu3715zpbf irlr3715zpbf.pdf 

PD - 95088A IRLR3715ZPbF IRLU3715ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits D-Pak I-Pak l Ultra-Low Gate Impedance IRLR3715Z IRLU3715Z l Fully Cha

 9.27. Size:185K  international rectifier
 irlr3105.pdf 

PD - 94510B IRLR3105 AUTOMOTIVE MOSFET IRLU3105 HEXFET Power MOSFET Features D l Logic-Level Gate Drive VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 0.037 l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 25A S Description Specifically designed for Automotive applications, this HEXFET Power

 9.28. Size:111K  international rectifier
 irlr3714.pdf 

PD - 94266 IRLR3714 SMPS MOSFET IRLU3714 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag

 9.29. Size:285K  international rectifier
 irlu3410pbf irlr3410pbf.pdf 

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 9.30. Size:287K  international rectifier
 auirlr3705ztr.pdf 

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv

 9.31. Size:619K  international rectifier
 auirlr3105.pdf 

PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V Dynamic dV/dT Rating l Low On-Resistance RDS(on) typ. 30m l 175 C Operating Temperature G max 37m l Fast Switching l Fully Avalanche Rated S ID 25A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l A

 9.32. Size:322K  international rectifier
 irlr3915pbf irlu3915pbf.pdf 

PD - 95090B IRLR3915PbF IRLU3915PbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 14m Lead-Free G Description ID = 30A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista

 9.33. Size:262K  international rectifier
 irlu3714zpbf irlr3714zpbf.pdf 

PD - 95775A IRLR3714ZPbF IRLU3714ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 15m 4.7nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l

 9.34. Size:581K  international rectifier
 irlr3915.pdf 

PD - 94543 AUTOMOTIVE MOSFET IRLR3915 IRLU3915 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 14m G Description ID = 30A Specifically designed for Automotive applications, S this HEXFET Power MOSFET utilizes the

 9.35. Size:125K  international rectifier
 irlr3715 irlu3715.pdf 

PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage

 9.36. Size:636K  infineon
 auirlr3636.pdf 

AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175 C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C

 9.37. Size:555K  infineon
 auirlr3410.pdf 

AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175 C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 9.38. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf 

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

 9.39. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf 

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

 9.40. Size:670K  infineon
 auirlr3705z.pdf 

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali

 9.41. Size:1055K  cn vbsemi
 irlr3636trpbf.pdf 

IRLR3636TRPBF www.VBsemi.tw N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single D TO-252 G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25

 9.42. Size:893K  cn vbsemi
 irlr3110zpbf.pdf 

IRLR3110ZPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 100 % Rg Tested 0.0075 at VGS = 10 V 85 100 100 % UIS Tested 0.0095 at VGS = 4.5 V 75 APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25

 9.43. Size:796K  cn vbsemi
 irlr3105tr.pdf 

IRLR3105TR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 9.44. Size:863K  cn vbsemi
 irlr3410tr.pdf 

IRLR3410TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING

 9.45. Size:242K  inchange semiconductor
 irlr3636.pdf 

isc N-Channel MOSFET Transistor IRLR3636, IIRLR3636 FEATURES Static drain-source on-resistance RDS(on) 6.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V

 9.46. Size:242K  inchange semiconductor
 irlr3705z.pdf 

isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705Z FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Ga

 9.47. Size:242K  inchange semiconductor
 irlr3715z.pdf 

isc N-Channel MOSFET Transistor IRLR3715Z, IIRLR3715Z FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.48. Size:242K  inchange semiconductor
 irlr3110z.pdf 

isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Ga

 9.49. Size:241K  inchange semiconductor
 irlr3717.pdf 

isc N-Channel MOSFET Transistor IRLR3717, IIRLR3717 FEATURES Static drain-source on-resistance RDS(on) 4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 20 V DSS V Gate-S

 9.50. Size:241K  inchange semiconductor
 irlr3303.pdf 

isc N-Channel MOSFET Transistor IRLR3303,IIRLR3303 FEATURES Static drain-source on-resistance RDS(on) 31m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-S

 9.51. Size:241K  inchange semiconductor
 irlr3410.pdf 

isc N-Channel MOSFET Transistor IRLR3410, IIRLR3410 FEATURES Static drain-source on-resistance RDS(on) 105m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

 9.52. Size:242K  inchange semiconductor
 irlr3103.pdf 

isc N-Channel MOSFET Transistor IRLR3103, IIRLR3103 FEATURES Static drain-source on-resistance RDS(on) 19m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-

 9.53. Size:242K  inchange semiconductor
 irlr3114z.pdf 

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z FEATURES Static drain-source on-resistance RDS(on) 4.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gat

 9.54. Size:241K  inchange semiconductor
 irlr3105.pdf 

isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105 FEATURES Static drain-source on-resistance RDS(on) 37m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

 9.55. Size:241K  inchange semiconductor
 irlr3915.pdf 

isc N-Channel MOSFET Transistor IRLR3915, IIRLR3915 FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-