IRLR8729PBF-1 - описание и поиск аналогов

IRLR8729PbF-1 HEXFET Power MOSFET VDS 30 V D D RDS(on) max 8.9 m (@V = 10V) GS S Qg (typical) 10 nC G G ID 58 A D-Pak S (@T = 25 C) C IRLR8729PbF-1 Features Benefits Industry-standard pinout D-Pak and I-Pak Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier

PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 8.9m 10nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully C

PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 8.9m 10nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully C

IRLR8729TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSO

isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729 FEATURES Static drain-source on-resistance RDS(on) 8.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fully characterized avalanche voltage and current ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai