IRLML2402GPBF - описание и поиск аналогов

PD - 96162A IRLML2402GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 VDSS = 20V l SOT-23 Footprint 3 D l Low Profile (

IRLML2402PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

IRLML2402PbF-1 HEXFET Power MOSFET VDS 20 V G 1 RDS(on) max 0.25 (@V = 4.5V) GS 3 D Qg (typical) 2.6 nC ID S 2 1.2 A (@T = 25 C) A Micro3 (SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL

PD - 9.1257C IRLML2402 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V SOT-23 Footprint Low Profile (

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2402 l D l l l l G l S l Description

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V) 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.01 1.9+0.1 D -0.1 RDS(ON) 350m (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symb

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V) 1 2 +0.02 +0.1 RDS(ON) 250m (VGS = 4.5V) 0.15 -0.02 0.95 -0.1 +0.1 D 1.9-0.2 RDS(ON) 350m (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V) 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.01 1.9+0.1 D -0.1 RDS(ON) 350m (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symb

IRLML2402 N-Channel Enhancement Mode MOSFET Feature 30V/1A, RDS(ON) =750m (MAX) @VGS = 10V. Ids = 0.60A RDS(ON) = 900m (MAX) @VGS = 4.5V. Ids= 0.20A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteristics TA=25 Unless Otherwise

IRLML2402TRPBF www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC