IRFI530NPBF - описание и поиск аналогов

PD - 95419 IRFI530NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.11 l Lead-Free G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

IRFI530NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.11 Fully Avalanche Rated Lead-Free ID 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.11 Fully Avalanche Rated G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible

Document Number 90180 www.vishay.com 575 Document Number 90180 www.vishay.com 576 Document Number 90180 www.vishay.com 577 Document Number 90180 www.vishay.com 578 Document Number 90180 www.vishay.com 579 Document Number 90180 www.vishay.com 580 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o

IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = 10 V 0.16 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 33 175 C Operating Temperature Qgs (nC) 5.4 Dynamic dV/dt Rating Qgd (nC) 15 Low T

iscN-Channel MOSFET Transistor IRFI530G FEATURES Low drain-source on-resistance RDS(ON) =0.16 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI