IRFI710B - параметры транзистора MOSFET, его аналоги, datasheet

IRFI710B Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRFI710B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7.7 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
   Тип корпуса: TO262

Аналог (замена) для IRFI710B

- подбор MOSFET транзистора по параметрам

IRFI710B Datasheet (PDF)

..1. Size:667K fairchild semi
irfw710b irfi710b.pdf pdf_icon

November 2001IRFW710B / IRFI710B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.7 nC)planar, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially tailored t

7.1. Size:117K 1
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9.1. Size:117K 1
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9.2. Size:116K 1
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9.3. Size:220K 1
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9.4. Size:221K international rectifier
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9.5. Size:988K international rectifier
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PD - 94855IRFI744GPbF Lead-Free11/19/03Document Number: 91157 www.vishay.com1IRFI744GPbFDocument Number: 91157 www.vishay.com2IRFI744GPbFDocument Number: 91157 www.vishay.com3IRFI744GPbFDocument Number: 91157 www.vishay.com4IRFI744GPbFDocument Number: 91157 www.vishay.com5IRFI744GPbFDocument Number: 91157 www.vishay.com6IRFI744GPbFDocument Nu

9.6. Size:925K international rectifier
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PD - 94854IRFI740GPbF Lead-Free11/19/03Document Number: 91156 www.vishay.com1IRFI740GPbFDocument Number: 91156 www.vishay.com2IRFI740GPbFDocument Number: 91156 www.vishay.com3IRFI740GPbFDocument Number: 91156 www.vishay.com4IRFI740GPbFDocument Number: 91156 www.vishay.com5IRFI740GPbFDocument Number: 91156 www.vishay.com6IRFI740GPbFTO-220 Full

9.7. Size:258K international rectifier
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PD- 95752IRFI734GPbF Lead-Free8/23/04Document Number: 91154 www.vishay.com1IRFI734GPbFDocument Number: 91154 www.vishay.com2IRFI734GPbFDocument Number: 91154 www.vishay.com3IRFI734GPbFDocument Number: 91154 www.vishay.com4IRFI734GPbFDocument Number: 91154 www.vishay.com5IRFI734GPbFDocument Number: 91154 www.vishay.com6IRFI734GPbFPeak Diode Re

9.8. Size:261K international rectifier
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9.9. Size:540K international rectifier
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StrongIRFET IRFI7440GPbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 2.5m Resonant mode power supplies S OR-ing and redu

9.10. Size:241K international rectifier
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9.11. Size:566K international rectifier
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StrongIRFET IRFI7446GPbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 40V BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.3m Resonant mode power supplies S OR-ing and redu

9.12. Size:917K international rectifier
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PD - 94987IRFI730GPbF Lead-Free2/9/04Document Number: 91153 www.vishay.com1IRFI730GPbFDocument Number: 91153 www.vishay.com2IRFI730GPbFDocument Number: 91153 www.vishay.com3IRFI730GPbFDocument Number: 91153 www.vishay.com4IRFI730GPbFDocument Number: 91153 www.vishay.com5IRFI730GPbFDocument Number: 91153 www.vishay.com6IRFI730GPbFTO-220 Full-P

9.13. Size:170K international rectifier
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9.14. Size:679K fairchild semi
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November 2001IRFW740B / IRFI740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

9.15. Size:666K fairchild semi
irfw720b irfi720b.pdf pdf_icon

November 2001IRFW720B / IRFI720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

9.16. Size:1583K vishay
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IRFI740G, SiHFI740GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; AvailableRDS(on) ()VGS = 10 V 0.55f = 60 Hz)RoHS*Qg (Max.) (nC) 66COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Sin

9.17. Size:1709K vishay
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IRFI744G, SiHFI744GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.63f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mmQgs (nC) 12 Dynamic dV/dt RatingQgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av

9.18. Size:1544K vishay
irfi730g sihfi730g.pdf pdf_icon

IRFI730G, SiHFI730GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.0f = 60 Hz)RoHS*Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 5.7 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

9.19. Size:1499K vishay
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IRFI720G, SiHFI720GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.8f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt RatingQgs (nC) 3.3 Low Thermal ResistanceQgd (nC) 11 Lead (Pb)-fre

9.20. Size:1296K vishay
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IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

9.21. Size:846K vishay
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IRFI734G, SiHFI734GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450 High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 1.2 Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 45 Dynamic dV/dtQgs (nC) 6.6 Low Thermal ResistanceQgd (nC) 24 Lead (Pb)-free Configuration SingleDESCRIPTIOND

9.22. Size:1741K vishay
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9.23. Size:602K infineon
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IRFI7536GPbF HEXFET Power MOSFET Applications VDSS 60V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 2.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 3.4mID 86A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capaci

9.24. Size:201K inchange semiconductor
irfi7440g.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI7440GFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

9.25. Size:201K inchange semiconductor
irfi7446g.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI7446GFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

9.26. Size:201K inchange semiconductor
irfi7536g.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI7536GFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

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