IRFIB7N50APBF - параметры транзистора MOSFET, его аналоги, datasheet

IRFIB7N50APBF Datasheet (PDF)

..1. Size:197K international rectifier
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PD - 94805SMPS MOSFETIRFIB7N50APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt RuggednessG D S Ful

4.1. Size:96K international rectifier
irfib7n50a.pdf pdf_icon

PD - 91810SMPS MOSFET IRFIB7N50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capaci

4.2. Size:143K vishay
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IRFIB7N50A, SiHFIB7N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTRuggednessQg (Max.) (nC) 52 Fully Characterized Capacitance andQgs (nC) 13Avalanche Voltage and CurrentQgd (nC) 18 E

4.3. Size:274K inchange semiconductor
irfib7n50a.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFIB7N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.52 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

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