Справочник MOSFET. IRL8113SPBF

 

IRL8113SPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL8113SPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 105 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 620 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IRL8113SPBF

 

 

IRL8113SPBF Datasheet (PDF)

 ..1. Size:279K  international rectifier
 irl8113lpbf irl8113spbf irl8113pbf.pdf

IRL8113SPBF IRL8113SPBF

PD - 95582IRL8113PbFIRL8113SPbFIRL8113LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQg (Typ.)l Lead-Free30V 6.0m 23nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentTO-220AB D2Pak TO-262IRL8113 IRL8113S IRL8113LAbsolute Maximum

 6.1. Size:269K  inchange semiconductor
 irl8113s.pdf

IRL8113SPBF IRL8113SPBF

isc N-Channel MOSFET Transistor IRL8113SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(

 7.1. Size:245K  inchange semiconductor
 irl8113.pdf

IRL8113SPBF IRL8113SPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL8113IIRL8113FEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 8.1. Size:423K  international rectifier
 irl8114pbf.pdf

IRL8113SPBF IRL8113SPBF

IRL8114PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30V D Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5mGBenefits ID (Silicon Limited) 120A Low RDS(on) at 4.5V VGS S Low Gate Charge ID (Package Limited) 90A Fully Characterized Capacitance and Avalanche SOA Lead-Free

 8.2. Size:246K  inchange semiconductor
 irl8114.pdf

IRL8113SPBF IRL8113SPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL8114IIRL8114FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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