Справочник MOSFET. IRLB8721PBF

 

IRLB8721PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLB8721PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.35 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 62 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 7.6 nC
   trⓘ - Время нарастания: 93 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRLB8721PBF

 

 

IRLB8721PBF Datasheet (PDF)

 ..1. Size:267K  international rectifier
 irlb8721pbf.pdf

IRLB8721PBF IRLB8721PBF

PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG

 ..2. Size:267K  infineon
 irlb8721pbf.pdf

IRLB8721PBF IRLB8721PBF

PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG

 5.1. Size:2134K  cn vbsemi
 irlb8721p.pdf

IRLB8721PBF IRLB8721PBF

IRLB8721Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewAB

 6.1. Size:246K  inchange semiconductor
 irlb8721.pdf

IRLB8721PBF IRLB8721PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8721IIRLB8721FEATURESStatic drain-source on-resistance:RDS(on) 8.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 8.1. Size:266K  international rectifier
 irlb8743pbf.pdf

IRLB8721PBF IRLB8721PBF

PD - 96232IRLB8743PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 3.2m 36nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRL

 8.2. Size:264K  international rectifier
 irlb8748pbf.pdf

IRLB8721PBF IRLB8721PBF

PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87

 8.3. Size:264K  infineon
 irlb8748pbf.pdf

IRLB8721PBF IRLB8721PBF

PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87

 8.4. Size:246K  inchange semiconductor
 irlb8743.pdf

IRLB8721PBF IRLB8721PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8743IIRLB8743FEATURESStatic drain-source on-resistance:RDS(on) 3.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 8.5. Size:246K  inchange semiconductor
 irlb8748.pdf

IRLB8721PBF IRLB8721PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8748IIRLB8748FEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

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