IRL3803PBF - описание и поиск аналогов

PD - 94996 IRL3803PbF Lead-Free www.irf.com 1 2/10/04 IRL3803PbF 2 www.irf.com IRL3803PbF www.irf.com 3 IRL3803PbF 4 www.irf.com IRL3803PbF www.irf.com 5 IRL3803PbF 6 www.irf.com IRL3803PbF www.irf.com 7 IRL3803PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rec

PD-95101A IRL3803SPbF IRL3803LPbF Lead-Free www.irf.com 1 12/9/04 IRL3803S/LPbF 2 www.irf.com IRL3803S/LPbF www.irf.com 3 IRL3803S/LPbF 4 www.irf.com IRL3803S/LPbF www.irf.com 5 IRL3803S/LPbF 6 www.irf.com IRL3803S/LPbF www.irf.com 7 IRL3803S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) 8 www.irf.com IRL3803S/LPbF TO-262 Package Outl

PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching ID = 140A l Fully Avalanche Rated S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize ad

PD - 91301C IRL3803 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.006 175 C Operating Temperature G Fast Switching Fully Avalanche Rated ID = 140A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

PD - 95955 IRL3803VPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Fully Avalanche Rated ID = 140A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 9.1319D IRL3803S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 30V Surface Mount (IRL3803S) Low-profile through-hole (IRL3803L) 175 C Operating Temperature RDS(on) = 0.006 Fast Switching G Fully Avalanche Rated ID = 140A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

PD-95101A IRL3803SPbF IRL3803LPbF Lead-Free www.irf.com 1 12/9/04 IRL3803S/LPbF 2 www.irf.com IRL3803S/LPbF www.irf.com 3 IRL3803S/LPbF 4 www.irf.com IRL3803S/LPbF www.irf.com 5 IRL3803S/LPbF 6 www.irf.com IRL3803S/LPbF www.irf.com 7 IRL3803S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) 8 www.irf.com IRL3803S/LPbF TO-262 Package Outl

IRL3803S www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0038 at VGS = 10 V 98 30 82 nC 0.0044 at VGS = 4.5 V 98 APPLICATIONS OR-ing Server DC/DC D I2PAK D2PAK (TO-262) (TO-263) G G D S S VBNC

isc N-Channel MOSFET Transistor IRL3803VS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL3803 IIRL3803 FEATURES Static drain-source on-resistance RDS(on) 6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RAT

isc N-Channel MOSFET Transistor IRL3803V IIRL3803V FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an ext