Справочник MOSFET. IRL1404LPBF

 

IRL1404LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL1404LPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 270 ns
   Cossⓘ - Выходная емкость: 1500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRL1404LPBF

 

 

IRL1404LPBF Datasheet (PDF)

 ..1. Size:646K  international rectifier
irl1404lpbf irl1404spbf.pdf

IRL1404LPBF
IRL1404LPBF

PD - 95148IRL1404SPbFIRL1404LPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche RatedRDS(on) = 0.004 Lead-Free GDescriptionID = 160A Seventh Generation HEXFET power MOSFETs fromSInternational Rectifier utilize advanced processingtechniqu

 ..2. Size:648K  infineon
irl1404spbf irl1404lpbf.pdf

IRL1404LPBF
IRL1404LPBF

PD - 95148IRL1404SPbFIRL1404LPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche RatedRDS(on) = 0.004 Lead-Free GDescriptionID = 160A Seventh Generation HEXFET power MOSFETs fromSInternational Rectifier utilize advanced processingtechniqu

 6.1. Size:133K  international rectifier
irl1404l irl1404s.pdf

IRL1404LPBF
IRL1404LPBF

PD - 93854AIRL1404SIRL1404L Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 0.004 Fully Avalanche RatedGDescriptionSeventh Generation HEXFET power MOSFETs fromID = 160A International Rectifier utilize advanced processingStechniques to achieve e

 6.2. Size:250K  international rectifier
auirl1404l auirl1404s.pdf

IRL1404LPBF
IRL1404LPBF

PD - 96385AAUTOMOTIVE GRADEAUIRL1404SAUIRL1404LFeaturesHEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate DriveD Low On-Resistance V(BR)DSS40V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.4m Fast SwitchingG Fully Avalanche RatedID 160A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualif

 7.1. Size:102K  international rectifier
irl1404.pdf

IRL1404LPBF
IRL1404LPBF

PD -93854IRL1404HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 160A SDescriptionSeventh Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low

 7.2. Size:375K  international rectifier
auirl1404zstrl.pdf

IRL1404LPBF
IRL1404LPBF

PD - 96331AUTOMOTIVE GRADEAUIRL1404ZAUIRL1404ZSAUIRL1404ZLFeaturesHEXFET Power MOSFETl Logic Levell Advanced Process TechnologyV(BR)DSS 40VDl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ.2.5ml Fast Switching max. 3.1ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu

 7.3. Size:281K  international rectifier
irl1404zpbf irl1404zspbf irl1404zlpbf.pdf

IRL1404LPBF
IRL1404LPBF

PD - 95446BIRL1404ZPbFIRL1404ZSPbFIRL1404ZLPbFFeaturesl Logic LevelHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 40Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 3.1ml Lead-FreeGID = 120ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 7.4. Size:213K  international rectifier
irl1404pbf.pdf

IRL1404LPBF
IRL1404LPBF

PD - 95588AIRL1404PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 4.0mGl Fast Switchingl Fully Avalanche RatedID = 160Al Lead-Free SDescriptionSeventh Generation HEXFET power MOSFETs from InternationalRectifier utilize advanced processing techniques to

 7.5. Size:754K  infineon
auirl1404z auirl1404zs auirl1404zl.pdf

IRL1404LPBF
IRL1404LPBF

AUIRL1404Z AUIRL1404ZS AUTOMOTIVE GRADE AUIRL1404ZL HEXFET Power MOSFET Features VDSS 40V Logic Level Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.1m 175C Operating Temperature ID (Silicon Limited) 180A Fast Switching ID (Package Limited) 160A Repetitive Avalanche Allowed up to Tjmax

 7.6. Size:285K  infineon
irl1404zpbf irl1404zspbf irl1404zlpbf.pdf

IRL1404LPBF
IRL1404LPBF

PD - 95446BIRL1404ZPbFIRL1404ZSPbFIRL1404ZLPbFFeaturesl Logic LevelHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 40Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 3.1ml Lead-FreeGID = 120ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

 7.7. Size:213K  infineon
irl1404pbf.pdf

IRL1404LPBF
IRL1404LPBF

PD - 95588AIRL1404PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 4.0mGl Fast Switchingl Fully Avalanche RatedID = 160Al Lead-Free SDescriptionSeventh Generation HEXFET power MOSFETs from InternationalRectifier utilize advanced processing techniques to

 7.8. Size:252K  inchange semiconductor
irl1404z.pdf

IRL1404LPBF
IRL1404LPBF

isc N-Channel MOSFET Transistor IRL1404ZFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 7.9. Size:257K  inchange semiconductor
irl1404s.pdf

IRL1404LPBF
IRL1404LPBF

Isc N-Channel MOSFET Transistor IRL1404SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 7.10. Size:245K  inchange semiconductor
irl1404.pdf

IRL1404LPBF
IRL1404LPBF

isc N-Channel MOSFET Transistor IRL1404IIRL1404FEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extre

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