Справочник MOSFET. IRL2505SPBF

 

IRL2505SPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL2505SPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 104 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 130 nC
   trⓘ - Время нарастания: 160 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IRL2505SPBF

 

 

IRL2505SPBF Datasheet (PDF)

 ..1. Size:292K  international rectifier
irl2505spbf irl2505lpbf.pdf

IRL2505SPBF
IRL2505SPBF

PD - 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut

 ..2. Size:292K  infineon
irl2505lpbf irl2505spbf.pdf

IRL2505SPBF
IRL2505SPBF

PD - 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut

 6.1. Size:178K  international rectifier
irl2505s irl2505l.pdf

IRL2505SPBF
IRL2505SPBF

PD - 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu

 6.2. Size:251K  inchange semiconductor
irl2505s.pdf

IRL2505SPBF
IRL2505SPBF

isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 7.1. Size:108K  international rectifier
irl2505.pdf

IRL2505SPBF
IRL2505SPBF

PD - 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre

 7.2. Size:223K  international rectifier
irl2505pbf.pdf

IRL2505SPBF
IRL2505SPBF

PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech

 7.3. Size:223K  infineon
irl2505pbf.pdf

IRL2505SPBF
IRL2505SPBF

PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech

 7.4. Size:245K  inchange semiconductor
irl2505.pdf

IRL2505SPBF
IRL2505SPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2505IIRL2505FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

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