IRL3103PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL3103PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 94 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 64 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 120 ns
Cossⓘ - Выходная емкость: 650 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: TO220AB
Аналог (замена) для IRL3103PBF
IRL3103PBF Datasheet (PDF)
irl3103pbf.pdf
PD - 94994IRL3103PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 12ml Fast SwitchingGl Fully Avalanche RatedID = 64Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely
irl3103d2.pdf
PD 9.1660IRL3103D2PRELIMINARYFETKYTM MOSFET & SCHOTTKY RECTIFIERD Copackaged HEXFET Power MOSFETand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 54ASDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes offer
irl3103.pdf
PD - 91337IRL3103HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
irl3103d1s.pdf
PD- 9.1558AIRL3103D1SFETKYTM MOSFET & SCHOTTKY RECTIFIER Co-packaged HEXFET Power MOSFETDand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 64ASDescriptionThe FETKY family of co-packaged HEXFET powerMOSFETs and Schottky Diodes offer the desi
irl3103d2pbf.pdf
PD-95435IRL3103D2PbFFETKYTM MOSFET & SCHOTTKY RECTIFIERl Copackaged HEXFET Power MOSFET Dand Schottky DiodeVDSS = 30Vl Generation 5 Technologyl Logic Level Gate DriveRDS(on) = 0.014l Minimize Circuit InductanceGl Ideal For Synchronous Regulator ApplicationID = 54Al Lead-FreeSDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes
irl3103d1.pdf
PD 9.1608CIRL3103D1FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET Power MOSFET Dand Schottky DiodeVDSS = 30V Generation 5 Technology Logic Level Gate DriveRDS(on) = 0.014 Minimize Circuit InductanceG Ideal For Synchronous Regulator ApplicationID = 64ASDescriptionThe FETKY family of copackaged HEXFET powerMOSFETs and Schottky Diodes offer the designer
irl3103s irl3103l.pdf
PD - 94162IRL3103SIRL3103L Advanced Process Technology Surface Mount (IRL3103S)HEXFET Power MOSFET Low-profile through-hole (IRL3103L)D 175C Operating TemperatureVDSS = 30V Fast Switching Fully Avalanche RatedRDS(on) = 12mDescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toID = 64Aachieve ext
irl3103lpbf irl3103spbf.pdf
PD - 95150IRL3103SPbFIRL3103LPbF Advanced Process Technology Surface Mount (IRL3103S)HEXFET Power MOSFET Low-profile through-hole (IRL3103L) 175C Operating Temperature DVDSS = 30V Fast Switching Fully Avalanche RatedRDS(on) = 12m Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 64ARectifier utilize advanced processing technique
irl3103.pdf
PD - 91337IRL3103HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
irl3103s.pdf
isc N-Channel MOSFET Transistor IRL3103SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
irl3103.pdf
isc N-Channel MOSFET Transistor IRL3103IIRL3103FEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extrem
irl3103s(2).pdf
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isc N-Channel MOSFET Transistor IRL3103SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918