IRHY57130CM - Даташиты. Аналоги. Основные параметры

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/702D shall be completed by 26 May 2014. 26 February 2014 SUPERSEDING MIL-PRF-19500/702C 21 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484

PD - 93826ARADIATION HARDENED IRHY57130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57130CM 100K Rads (Si) 0.07 18A* IRHY53130CM 300K Rads (Si) 0.07 18A* IRHY54130CM 600K Rads (Si) 0.07 18A* IRHY58130CM 1000K Rads (Si) 0.085 18A*TO-257AAInternational Rectifiers R5TM tec

PD - 94318CIRHY57133CMSERADIATION HARDENED JANSR2N7488T3POWER MOSFET 130V, N-CHANNELTHRU-HOLE (TO-257AA) REF: MIL-PRF-19500/70555 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57133CMSE 100K Rads (Si) 0.09 18A* JANSR2N7488T3T0-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for sp

PD-93823CRADIATION HARDENED IRHY57234CMSEPOWER MOSFET 250V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0.41 9.6ATO-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spaceapplications. These devices have been characterizedFeatures:f

PD - 93827ARADIATION HARDENED IRHY57230CMPOWER MOSFET200V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57230CM 100K Rads (Si) 0.21 12.5A IRHY53230CM 300K Rads (Si) 0.21 12.5A IRHY54230CM 600K Rads (Si) 0.21 12.5A IRHY58230CM 1000K Rads (Si) 0.26 12.5ATO-257AAInternational Rectifiers R5TM

PD - 93825ARADIATION HARDENED IRHY57034CMPOWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57034CM 100K Rads (Si) 0.04 18A* IRHY53034CM 300K Rads (Si) 0.04 18A* IRHY54034CM 600K Rads (Si) 0.04 18A* IRHY58034CM 1000K Rads (Si) 0.048 18A*TO-257AAInternational Rectifiers R5TM tech

PD - 93822BIRHY57230CMSERADIATION HARDENED JANSR2N7489T3POWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-257AA) REF:MIL-PRF-19500/705TECHNOLOGY55 Product SummaryPart Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23 12A JANSR2N7489T3TO-257AAInternational Rectifiers R5TM technology provideshigh performance power MOSFETs for spac

PD - 93824ARADIATION HARDENED IRHY57Z30CMPOWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-257AA) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHY57Z30CM 100K Rads (Si) 0.03 18A* IRHY53Z30CM 300K Rads (Si) 0.03 18A* IRHY54Z30CM 600K Rads (Si) 0.03 18A* IRHY58Z30CM 1000K Rads (Si) 0.035 18A*TO-257AAInternational Rectifiers R5TM tech