IRHM7064 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRHM7064
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
Тип корпуса: TO254AA
IRHM7064 Datasheet (PDF)
irhm7064.pdf
PD - 91564DIRHM7064IRHM7064IRHM7064IRHM7064IRHM7064JANSR2N7431JANSR2N7431JANSR2N7431JANSR2N7431JANSR2N7431RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF:MIL-PRF-19500/6
irhm7064 irhm7160 irhm7260.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/663F shall be completed by 21 September 2013. 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,
irhm7054.pdf
PD - 90887DIRHM7054IRHM7054IRHM7054IRHM7054IRHM7054JANSR2N7394JANSR2N7394JANSR2N7394JANSR2N7394JANSR2N7394RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNEL60V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PRF-19500/
irhm7360.pdf
PD - 90823AREPETITIVE AVALANCHE AND dv/dt RATED IRHM7360HEXFET TRANSISTOR IRHM8360N CHANNELMEGA RAD HARDProduct Summary400Volt, 0.22, MEGA RAD HARD HEXFETPart Number BVDSS RDS(on) IDInternational Rectifiers RAD HARD technologyHEXFETs demonstrate excellent threshold voltageIRHM7360 400V 0.22 22Astability and breakdown voltage stability at tota
irhm7450se.pdf
PD - 91223DRADIATION HARDENED IRHM7450SEPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHM7450SE 100K Rads (Si) 0.51 12ATO-254AAInternational Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology
irhm7260.pdf
PD - 91332DIRHM7260IRHM7260IRHM7260IRHM7260IRHM7260 JANSR2N7433JANSR2N7433 JANSR2N7433 JANSR2N7433JANSR2N7433RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR
irhm7264se.pdf
PD - 91393EIRHM7264SEIRHM7264SEIRHM7264SEIRHM7264SEIRHM7264SEJANSR2N7434JANSR2N7434JANSR2N7434JANSR2N7434JANSR2N7434RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF:
irhm7264se irhm7360se irhm7460se.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND
irhm7z60.pdf
PD - 91701BRADIATION HARDENEDIRHM7Z60POWER MOSFET30V, N-CHANNELTHRU-HOLE (TO-254AA) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHM7Z60 100K Rads (Si) 0.014 35*A IRHM3Z60 300K Rads (Si) 0.014 35*A IRHM4Z60 600K Rads (Si) 0.014 35*A IRHM8Z60 1000K Rads (Si) 0.014 35*ATO-254AAInternational Rectifiers RAD-Hard HEX
irhm7360se.pdf
PD - 91224DIRHM7360SEIRHM7360SEIRHM7360SEIRHM7360SEIRHM7360SEJANSR2N7391JANSR2N7391JANSR2N7391JANSR2N7391JANSR2N7391RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED400V, N-CHANNEL400V, N-CHANNEL400V, N-CHANNEL400V, N-CHANNEL400V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF:
irhm7230.pdf
PD - 90713EIRHM7230IRHM7230IRHM7230RADIATION HARDENED IRHM7230RADIATION HARDENED IRHM7230RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE
irhm7250.pdf
PD - 90674CIRHM7250RADIATION HARDENED JANSR2N7269POWER MOSFET 200V, N-CHANNELREF: MIL-PRF-19500/603THRU-HOLE (TO-254AA)RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM7250 100K Rads (Si) 0.10 26A JANSR2N7269 IRHM3250 300K Rads (Si) 0.10 26A JANSF2N7269 IRHM4250 600K Rads (Si) 0.10 26A JANSG2N7269 IRHM82
irhm7460se.pdf
PD - 91394EIRHM7460SEIRHM7460SEIRHM7460SEIRHM7460SEIRHM7460SEJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELPOWER MOSFET REF: MIL-PRF-19500/661POWER MOSFET REF: MIL-PRF-19500/661POWER MOSF
irhm7130.pdf
PD - 90707DIRHM7130IRHM7130IRHM7130RADIATION HARDENED IRHM7130RADIATION HARDENED IRHM7130RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE
irhm7250se.pdf
PD - 91779ARADIATION HARDENED IRHM7250SEPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHM7250SE 100K Rads (Si) 0.10 26ATO-254AAInternational Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsfor space applications. This technology has over a
irhm7150.pdf
PD - 90675CIRHM7150IRHM7150IRHM7150IRHM7150IRHM7150 JANSR2N7268JANSR2N7268 JANSR2N7268 JANSR2N7268JANSR2N7268RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR
irhm7450.pdf
PD - 90673AIRHM7450IRHM8450REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270HEXFET TRANSISTOR JANSH2N7270N CHANNELMEGA RAD HARD500Volt, 0.45, MEGA RAD HARD HEXFET Product SummaryInternational Rectifiers RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltageIRHM7450 500V 0.45 11Astability and breakdown v
irhm7160.pdf
PD - 91331CIRHM7160IRHM7160IRHM7160IRHM7160IRHM7160 JANSR2N7432JANSR2N7432 JANSR2N7432 JANSR2N7432JANSR2N7432RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNEL100V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918