INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

PD - 90674CIRHM7250RADIATION HARDENED JANSR2N7269POWER MOSFET 200V, N-CHANNELREF: MIL-PRF-19500/603THRU-HOLE (TO-254AA)RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM7250 100K Rads (Si) 0.10 26A JANSR2N7269 IRHM3250 300K Rads (Si) 0.10 26A JANSF2N7269 IRHM4250 600K Rads (Si) 0.10 26A JANSG2N7269 IRHM82

PD - 91779ARADIATION HARDENED IRHM7250SEPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHM7250SE 100K Rads (Si) 0.10 26ATO-254AAInternational Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsfor space applications. This technology has over a

PD - 91332DIRHM7260IRHM7260IRHM7260IRHM7260IRHM7260 JANSR2N7433JANSR2N7433 JANSR2N7433 JANSR2N7433JANSR2N7433RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR

PD - 91393EIRHM7264SEIRHM7264SEIRHM7264SEIRHM7264SEIRHM7264SEJANSR2N7434JANSR2N7434JANSR2N7434JANSR2N7434JANSR2N7434RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF:

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND

PD - 90713EIRHM7230IRHM7230IRHM7230RADIATION HARDENED IRHM7230RADIATION HARDENED IRHM7230RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/663F shall be completed by 21 September 2013. 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433