IRHM7450SE. Аналоги и основные параметры
Наименование производителя: IRHM7450SE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 151 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 640 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.51 Ohm
Тип корпуса: TO254AA
Аналог (замена) для IRHM7450SE
- подборⓘ MOSFET транзистора по параметрам
IRHM7450SE даташит
irhm7450se.pdf
PD - 91223D RADIATION HARDENED IRHM7450SE POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450SE 100K Rads (Si) 0.51 12A TO-254AA International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,
irhm7450.pdf
PD - 90673A IRHM7450 IRHM8450 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270 HEXFET TRANSISTOR JANSH2N7270 N CHANNEL MEGA RAD HARD 500Volt, 0.45 , MEGA RAD HARD HEXFET Product Summary International Rectifier s RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage IRHM7450 500V 0.45 11A stability and breakdown v
irhm7264se irhm7360se irhm7460se.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND
Другие IGBT... IRHM7160, IRHM7230, IRHM7250, IRHM7260, IRHM7264SE, IRHM7360, IRHM7360SE, IRHM7450, AO4407, IRHM7460SE, IRHM7Z60, IRHM9064, IRHM9130, IRHM9150, IRHM9160, IRHM9230, IRHM9250
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