Справочник MOSFET. IRHM7450SE

 

IRHM7450SE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRHM7450SE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 151 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 640 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.51 Ohm
   Тип корпуса: TO254AA

 Аналог (замена) для IRHM7450SE

 

 

IRHM7450SE Datasheet (PDF)

 ..1. Size:138K  international rectifier
 irhm7450se.pdf

IRHM7450SE IRHM7450SE

PD - 91223DRADIATION HARDENED IRHM7450SEPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHM7450SE 100K Rads (Si) 0.51 12ATO-254AAInternational Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

 6.1. Size:1035K  international rectifier
 irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf

IRHM7450SE IRHM7450SE

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

 6.2. Size:311K  international rectifier
 irhm7450.pdf

IRHM7450SE IRHM7450SE

PD - 90673AIRHM7450IRHM8450REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270HEXFET TRANSISTOR JANSH2N7270N CHANNELMEGA RAD HARD500Volt, 0.45, MEGA RAD HARD HEXFET Product SummaryInternational Rectifiers RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltageIRHM7450 500V 0.45 11Astability and breakdown v

 8.1. Size:384K  international rectifier
 irhm7264se irhm7360se irhm7460se.pdf

IRHM7450SE IRHM7450SE

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND

 8.2. Size:269K  international rectifier
 irhm7460se.pdf

IRHM7450SE IRHM7450SE

PD - 91394EIRHM7460SEIRHM7460SEIRHM7460SEIRHM7460SEIRHM7460SEJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELPOWER MOSFET REF: MIL-PRF-19500/661POWER MOSFET REF: MIL-PRF-19500/661POWER MOSF

Другие MOSFET... IRHM7160 , IRHM7230 , IRHM7250 , IRHM7260 , IRHM7264SE , IRHM7360 , IRHM7360SE , IRHM7450 , MMIS60R580P , IRHM7460SE , IRHM7Z60 , IRHM9064 , IRHM9130 , IRHM9150 , IRHM9160 , IRHM9230 , IRHM9250 .

 

 
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