IRHMS57Z60. Аналоги и основные параметры

Наименование производителя: IRHMS57Z60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 208 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm

Тип корпуса: TO254AA

Аналог (замена) для IRHMS57Z60

- подборⓘ MOSFET транзистора по параметрам

 

IRHMS57Z60 даташит

 ..1. Size:245K  international rectifier
 irhms57z60.pdf pdf_icon

IRHMS57Z60

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/697F shall be completed by 11 June 2015. 11 March 2015 SUPERSEDING MIL-PRF-19500/697E 15 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H

 7.1. Size:270K  international rectifier
 irhms57064 irhms57160.pdf pdf_icon

IRHMS57Z60

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,

 7.2. Size:334K  international rectifier
 irhms57163se irhms57260se irhms57264se.pdf pdf_icon

IRHMS57Z60

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/685G shall be completed by 16 January 2015. 16 October 2014 SUPERSEDING MIL-PRF-19500/685F 6 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JAN

 8.1. Size:107K  international rectifier
 irhms597160.pdf pdf_icon

IRHMS57Z60

PD - 94283 RADIATION HARDENED IRHMS597160 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A* Low-Ohmic TO-254AA International Rectifier s R5TM technology provides Features high performance power MOSFETs f

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IRHMK57160, IRHMK57260SE, IRHMK597160, IRHMS57064, IRHMS57160, IRHMS57163SE, IRHMS57260SE, IRHMS57264SE, IRF1405, IRHMS597064, IRHMS597160, IRHMS597260, IRHMS597Z60, IRHMS67160, IRHMS67164, IRHMS67260, IRHMS67264