IRFN214BTAFP001 - описание и поиск аналогов

 4.1. Size:605K  fairchild semi
 irfn214bta fp001.pdf 

IRFN214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.6A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching min

 9.1. Size:167K  international rectifier
 irfn240.pdf 

PD - 91548C IRFN240 JANTX2N7219U JANTXV2N7219U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 18A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

 9.2. Size:155K  international rectifier
 irfn250.pdf 

PD - 91549C IRFN250 JANTX2N7225U JANTXV2N7225U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN250 0.100 27.4A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re

 9.3. Size:23K  semelab
 irfn250smd.pdf 

IRFN250SMD MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS

 9.4. Size:226K  semelab
 irfn254.pdf 

 9.5. Size:23K  semelab
 irfn240smd.pdf 

IRFN240SMD MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS