IRFN240SMD - аналоги, даташиты, параметры транзистора

IRFN240SMD Datasheet (PDF)

..1. Size:23K semelab
irfn240smd.pdf pdf_icon

IRFN240SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

7.1. Size:167K international rectifier
irfn240.pdf pdf_icon

PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

9.1. Size:155K international rectifier
irfn250.pdf pdf_icon

PD - 91549CIRFN250JANTX2N7225UJANTXV2N7225UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN250 0.100 27.4AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re

9.2. Size:605K fairchild semi
irfn214bta fp001.pdf pdf_icon

IRFN214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.6A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to Fast switchingmin