Справочник MOSFET. IRFB7446

 

IRFB7446 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB7446
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 99 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 123 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 62 nC
   trⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 475 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRFB7446

 

 

IRFB7446 Datasheet (PDF)

 ..1. Size:543K  international rectifier
 irfb7446.pdf

IRFB7446 IRFB7446

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 ..2. Size:543K  infineon
 irfb7446pbf.pdf

IRFB7446 IRFB7446

StrongIRFET IRFB7446PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power supp

 ..3. Size:245K  inchange semiconductor
 irfb7446.pdf

IRFB7446 IRFB7446

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7446IIRFB7446FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:541K  international rectifier
 irfb7446g.pdf

IRFB7446 IRFB7446

StrongIRFET IRFB7446GPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.6mBattery powered circuits max 3.3m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 123A Resonant mode power sup

 7.1. Size:253K  international rectifier
 irfb7440.pdf

IRFB7446 IRFB7446

StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw

 7.2. Size:253K  infineon
 irfb7440pbf.pdf

IRFB7446 IRFB7446

StrongIRFETIRFB7440PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsD VDSS 40Vl BLDC Motor drive applicationsl Battery powered circuits RDS(on) typ. 2.0ml Half-bridge and full-bridge topologies max. 2.5mGl Synchronous rectifier applicationsID 172Al Resonant mode power suppliesSID (Package Limited) 120A l OR-ing and redundant power sw

 7.3. Size:246K  inchange semiconductor
 irfb7440.pdf

IRFB7446 IRFB7446

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7440 IIRFB7440FEATURESStatic drain-source on-resistance:RDS(on) 2.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

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