IRFR024NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFR024NPBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 34 ns
Cossⓘ - Выходная емкость: 140 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO252
Аналог (замена) для IRFR024NPBF
IRFR024NPBF Datasheet (PDF)
irfr024npbf irfu024npbf.pdf
PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform
irfr024npbf irfu024npbf.pdf
PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform
irfr024npbf.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRFR024NPBFFEATURESDrain Current I =17A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max)@V =10VDS(on) GSHigh density cell design for ultra low RdsonFully characterized avalanche voltage and currentMinimum Lot-to-Lot variations for robust deviceperform
irfr024n.pdf
PD- 9.1336AIRFR/U024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process TechnologyRDS(on) = 0.075G Fast Switching Fully Avalanche RatedID = 17A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possi
auirfr024n auirfu024n.pdf
AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S
irfr024ntr.pdf
IRFR024NTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mot
irfr024n.pdf
isc N-Channel MOSFET Transistor IRFR024N, IIRFR024NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918