IRFR1205PBF - Даташиты. Аналоги. Основные параметры

PD - 95600AIRFR/U1205PbF Lead-Freewww.irf.com 112/9/04IRFR/U1205PbF2 www.irf.comIRFR/U1205PbFwww.irf.com 3IRFR/U1205PbF4 www.irf.comIRFR/U1205PbFwww.irf.com 5IRFR/U1205PbF6 www.irf.comIRFR/U1205PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Tr

PD - 91318BIRFR/U1205HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR1205)VDSS = 55V Straight Lead (IRFU1205) Fast SwitchingRDS(on) = 0.027 Fully Avalanche RatedGDescriptionID = 44A SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This

IRFR1205Featuresl VDS (V) = 55V ID= 44A (VGS=10V)l27m (VGS = 10V)ll RDS(ON)DescriptionThe D-PAK is designed for surface mounting using vapor phase,infrared, or wave soldering technigues The straight lead version Dis for through- hole mounting applications. Power dissipation le-vels up to 1.5 watts are possible in typical surface mount appli-cations.Gl Ultra LowOn

IRFR1205TRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

60V N-Channel Power MOSFETDESCRIPTIONThe IRFR1205TR uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can beused in a wide variety of applications.KEY CHARACTERISTICS VDS = 60V,ID= 30ASchematic diagramRDS(ON)

isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205FEATURESStatic drain-source on-resistance:RDS(on)27mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-