IRFR13N15DPBF. Аналоги и основные параметры

Наименование производителя: IRFR13N15DPBF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 86 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 26 ns

Cossⓘ - Выходная емкость: 130 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: TO252

Аналог (замена) для IRFR13N15DPBF

- подборⓘ MOSFET транзистора по параметрам

 

IRFR13N15DPBF даташит

 ..1. Size:222K  international rectifier
 irfr13n15dpbf irfr13n15dpbf.pdf pdf_icon

IRFR13N15DPBF

PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

 ..2. Size:222K  international rectifier
 irfu13n15dpbf irfr13n15dpbf.pdf pdf_icon

IRFR13N15DPBF

PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

 ..3. Size:222K  international rectifier
 irfr13n15dpbf.pdf pdf_icon

IRFR13N15DPBF

PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

 4.1. Size:128K  international rectifier
 irfr13n15d.pdf pdf_icon

IRFR13N15DPBF

PD - 93905A IRFR13N15D SMPS MOSFET IRFU13N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.18 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

ПОКАЗАТЬ ЕЩЁ

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