IRFP064VPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP064VPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 250 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 130 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 260 nC
Время нарастания (tr): 200 ns
Выходная емкость (Cd): 1330 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0055 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP064VPBF
IRFP064VPBF Datasheet (PDF)
irfp064vpbf.pdf
PD - 95501AIRFP064VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 5.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 130Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced
irfp064v.pdf
PD - 94112IRFP064VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 5.5mG Fast Switching Fully Avalanche RatedID = 130A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to
auirfp064n.pdf
PD - 96375AUTOMOTIVE GRADEAUIRFP064NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.008 Fast SwitchingG Fully Avalanche RatedID110A Repetitive Avalanche Allowed up to TjmaxS Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifical
irfp064npbf.pdf
PD - 95001IRFP064NPbF Lead-Freewww.irf.com 12/11/04IRFP064NPbF2 www.irf.comIRFP064NPbFwww.irf.com 3IRFP064NPbF4 www.irf.comIRFP064NPbFwww.irf.com 5IRFP064NPbF6 www.irf.comIRFP064NPbFwww.irf.com 7IRFP064NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1
irfp064n.pdf
PD - 9.1383AIRFP064NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 110A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance
irfp064pbf.pdf
PD- 95672IRFP064PbF Lead-Free8/2/04Document Number: 91201 www.vishay.com1IRFP064PbFDocument Number: 91201 www.vishay.com2IRFP064PbFDocument Number: 91201 www.vishay.com3IRFP064PbFDocument Number: 91201 www.vishay.com4IRFP064PbFDocument Number: 91201 www.vishay.com5IRFP064PbFDocument Number: 91201 www.vishay.com6IRFP064PbFPeak Diode Recovery d
irfp064 sihfp064.pdf
IRFP064, SiHFP064Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.009 Ultra Low On- ResistanceRoHS*COMPLIANTQg (Max.) (nC) 190 Very Low Thermal ResistanceQgs (nC) 55 Isolated Central Mounting HoleQgd (nC) 90 175 C Operating Temperature Fast Swi
irfp064npbf.pdf
PD - 95001IRFP064NPbF Lead-Freewww.irf.com 12/11/04IRFP064NPbF2 www.irf.comIRFP064NPbFwww.irf.com 3IRFP064NPbF4 www.irf.comIRFP064NPbFwww.irf.com 5IRFP064NPbF6 www.irf.comIRFP064NPbFwww.irf.com 7IRFP064NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1
irfp064pbf.pdf
DIP Type MOSFETN-Channel MOSFETIRFP064PBF (KRFP064PBF)TO-247 Features VDS (V) = 60V ID = 70 A (VGS = 10V) RDS(ON) 9m (VGS = 10V) Very Low Thermal Resistance Isolated Central Mounting Hole 1 2 3 Fast SwitchingGD Dynamic dV/dt RatingSDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt
irfp064n.pdf
isc N-Channel MOSFET Transistor IRFP064NFEATURESStatic drain-source on-resistance:RDS(on)8m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source
irfp064.pdf
iscN-Channel MOSFET Transistor IRFP064FEATURESLow drain-source on-resistance:RDS(ON) 9m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTH220N055T
