Справочник MOSFET. IRFP064VPBF

 

IRFP064VPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP064VPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 260 nC
   trⓘ - Время нарастания: 200 ns
   Cossⓘ - Выходная емкость: 1330 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFP064VPBF

 

 

IRFP064VPBF Datasheet (PDF)

 ..1. Size:222K  international rectifier
irfp064vpbf.pdf

IRFP064VPBF
IRFP064VPBF

PD - 95501AIRFP064VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 5.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 130Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced

 6.1. Size:210K  international rectifier
irfp064v.pdf

IRFP064VPBF
IRFP064VPBF

PD - 94112IRFP064VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 5.5mG Fast Switching Fully Avalanche RatedID = 130A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

 7.1. Size:255K  international rectifier
auirfp064n.pdf

IRFP064VPBF
IRFP064VPBF

PD - 96375AUTOMOTIVE GRADEAUIRFP064NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.008 Fast SwitchingG Fully Avalanche RatedID110A Repetitive Avalanche Allowed up to TjmaxS Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifical

 7.2. Size:598K  international rectifier
irfp064npbf.pdf

IRFP064VPBF
IRFP064VPBF

PD - 95001IRFP064NPbF Lead-Freewww.irf.com 12/11/04IRFP064NPbF2 www.irf.comIRFP064NPbFwww.irf.com 3IRFP064NPbF4 www.irf.comIRFP064NPbFwww.irf.com 5IRFP064NPbF6 www.irf.comIRFP064NPbFwww.irf.com 7IRFP064NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

 7.3. Size:107K  international rectifier
irfp064n.pdf

IRFP064VPBF
IRFP064VPBF

PD - 9.1383AIRFP064NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 110A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance

 7.4. Size:1790K  international rectifier
irfp064pbf.pdf

IRFP064VPBF
IRFP064VPBF

PD- 95672IRFP064PbF Lead-Free8/2/04Document Number: 91201 www.vishay.com1IRFP064PbFDocument Number: 91201 www.vishay.com2IRFP064PbFDocument Number: 91201 www.vishay.com3IRFP064PbFDocument Number: 91201 www.vishay.com4IRFP064PbFDocument Number: 91201 www.vishay.com5IRFP064PbFDocument Number: 91201 www.vishay.com6IRFP064PbFPeak Diode Recovery d

 7.5. Size:171K  international rectifier
irfp064.pdf

IRFP064VPBF
IRFP064VPBF

 7.6. Size:1684K  vishay
irfp064 sihfp064.pdf

IRFP064VPBF
IRFP064VPBF

IRFP064, SiHFP064Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.009 Ultra Low On- ResistanceRoHS*COMPLIANTQg (Max.) (nC) 190 Very Low Thermal ResistanceQgs (nC) 55 Isolated Central Mounting HoleQgd (nC) 90 175 C Operating Temperature Fast Swi

 7.7. Size:598K  infineon
irfp064npbf.pdf

IRFP064VPBF
IRFP064VPBF

PD - 95001IRFP064NPbF Lead-Freewww.irf.com 12/11/04IRFP064NPbF2 www.irf.comIRFP064NPbFwww.irf.com 3IRFP064NPbF4 www.irf.comIRFP064NPbFwww.irf.com 5IRFP064NPbF6 www.irf.comIRFP064NPbFwww.irf.com 7IRFP064NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

 7.8. Size:3803K  kexin
irfp064pbf.pdf

IRFP064VPBF
IRFP064VPBF

DIP Type MOSFETN-Channel MOSFETIRFP064PBF (KRFP064PBF)TO-247 Features VDS (V) = 60V ID = 70 A (VGS = 10V) RDS(ON) 9m (VGS = 10V) Very Low Thermal Resistance Isolated Central Mounting Hole 1 2 3 Fast SwitchingGD Dynamic dV/dt RatingSDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt

 7.9. Size:362K  cn evvo
irfp064n.pdf

IRFP064VPBF
IRFP064VPBF

IRFP064N N-Channel MOSFET Advanced Process TechnologyTO-247AC Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedDescriptionThe TO-247 package is preferred for commercial-industrialapplications where higher power levels preclude the use ofDTO-220 devices. The TO-247 is similar but superior to theVDSS = 55Ve

 7.10. Size:364K  inchange semiconductor
irfp064n.pdf

IRFP064VPBF
IRFP064VPBF

isc N-Channel MOSFET Transistor IRFP064NFEATURESStatic drain-source on-resistance:RDS(on)8m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source

 7.11. Size:400K  inchange semiconductor
irfp064.pdf

IRFP064VPBF
IRFP064VPBF

iscN-Channel MOSFET Transistor IRFP064FEATURESLow drain-source on-resistance:RDS(ON) 9m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

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