IRFP264NPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP264NPBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 380 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 44 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 62 ns
Cossⓘ - Выходная емкость: 480 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: TO247
Аналог (замена) для IRFP264NPBF
IRFP264NPBF Datasheet (PDF)
irfp264npbf.pdf
PD - 94811IRFP264NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsS Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achi
irfp264npbf.pdf
IRFP264N, SiHFP264NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.060 175 C Operating TemperatureRoHS*Qg (Max.) (nC) 210 Fast Switching COMPLIANTQgs (nC) 34 Fully Avalanche RatedQgd (nC) 94 Ease of ParallelingConfiguration Single Simple
irfp264n.pdf
PD - 94214IRFP264NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely l
irfp264.pdf
PD - 94900IRFP264PbF Lead-Free12/18/03Document Number: 91217 www.vishay.com1IRFP264PbFDocument Number: 91217 www.vishay.com2IRFP264PbFDocument Number: 91217 www.vishay.com3IRFP264PbFDocument Number: 91217 www.vishay.com4IRFP264PbFDocument Number: 91217 www.vishay.com5IRFP264PbFDocument Number: 91217 www.vishay.com6IRFP264PbFTO-247AC Package O
irfp264pbf.pdf
PD - 94900IRFP264PbF Lead-Freewww.irf.com 112/18/03IRFP264PbF2 www.irf.comIRFP264PbFwww.irf.com 3IRFP264PbF4 www.irf.comIRFP264PbFwww.irf.com 5IRFP264PbF6 www.irf.comIRFP264PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2
irfp264 sihfp264.pdf
IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl
irfp264.pdf
iscN-Channel MOSFET Transistor IRFP264FEATURESLow drain-source on-resistance:RDS(ON) 75m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918