PD - 94900IRFP264PbF Lead-Freewww.irf.com 112/18/03IRFP264PbF2 www.irf.comIRFP264PbFwww.irf.com 3IRFP264PbF4 www.irf.comIRFP264PbFwww.irf.com 5IRFP264PbF6 www.irf.comIRFP264PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2

PD - 94900IRFP264PbF Lead-Free12/18/03Document Number: 91217 www.vishay.com1IRFP264PbFDocument Number: 91217 www.vishay.com2IRFP264PbFDocument Number: 91217 www.vishay.com3IRFP264PbFDocument Number: 91217 www.vishay.com4IRFP264PbFDocument Number: 91217 www.vishay.com5IRFP264PbFDocument Number: 91217 www.vishay.com6IRFP264PbFTO-247AC Package O

PD - 94811IRFP264NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsS Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achi

PD - 94214IRFP264NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely l

IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl

IRFP264N, SiHFP264NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.060 175 C Operating TemperatureRoHS*Qg (Max.) (nC) 210 Fast Switching COMPLIANTQgs (nC) 34 Fully Avalanche RatedQgd (nC) 94 Ease of ParallelingConfiguration Single Simple

iscN-Channel MOSFET Transistor IRFP264FEATURESLow drain-source on-resistance:RDS(ON) 75m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER