IRFP264PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP264PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 280 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 38 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 210 nC
Время нарастания (tr): 99 ns
Выходная емкость (Cd): 870 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP264PBF
IRFP264PBF Datasheet (PDF)
irfp264pbf.pdf
PD - 94900IRFP264PbF Lead-Freewww.irf.com 112/18/03IRFP264PbF2 www.irf.comIRFP264PbFwww.irf.com 3IRFP264PbF4 www.irf.comIRFP264PbFwww.irf.com 5IRFP264PbF6 www.irf.comIRFP264PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2
irfp264.pdf
PD - 94900IRFP264PbF Lead-Free12/18/03Document Number: 91217 www.vishay.com1IRFP264PbFDocument Number: 91217 www.vishay.com2IRFP264PbFDocument Number: 91217 www.vishay.com3IRFP264PbFDocument Number: 91217 www.vishay.com4IRFP264PbFDocument Number: 91217 www.vishay.com5IRFP264PbFDocument Number: 91217 www.vishay.com6IRFP264PbFTO-247AC Package O
irfp264npbf.pdf
PD - 94811IRFP264NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsS Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achi
irfp264n.pdf
PD - 94214IRFP264NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely l
irfp264 sihfp264.pdf
IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl
irfp264npbf.pdf
IRFP264N, SiHFP264NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.060 175 C Operating TemperatureRoHS*Qg (Max.) (nC) 210 Fast Switching COMPLIANTQgs (nC) 34 Fully Avalanche RatedQgd (nC) 94 Ease of ParallelingConfiguration Single Simple
irfp264.pdf
iscN-Channel MOSFET Transistor IRFP264FEATURESLow drain-source on-resistance:RDS(ON) 75m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
