PD - 94407SMPS MOSFETIRFP27N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply600V 180m 27A High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Char

PD - 95479ASMPS MOSFETIRFP27N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply600V 180m 27Al High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt

IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo

IRFP27N60K, SiHFP27N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.18RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 56 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 86and CurrentCo

iscN-Channel MOSFET Transistor IRFP27N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.22 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

PD - 94900IRFP264PbF Lead-Free12/18/03Document Number: 91217 www.vishay.com1IRFP264PbFDocument Number: 91217 www.vishay.com2IRFP264PbFDocument Number: 91217 www.vishay.com3IRFP264PbFDocument Number: 91217 www.vishay.com4IRFP264PbFDocument Number: 91217 www.vishay.com5IRFP264PbFDocument Number: 91217 www.vishay.com6IRFP264PbFTO-247AC Package O

PD - 95009IRFP254PbF Lead-Free2/12/04Document Number: 91214 www.vishay.com1IRFP254PbFDocument Number: 91214 www.vishay.com2IRFP254PbFDocument Number: 91214 www.vishay.com3IRFP254PbFDocument Number: 91214 www.vishay.com4IRFP254PbFDocument Number: 91214 www.vishay.com5IRFP254PbFDocument Number: 91214 www.vishay.com6IRFP254PbFTO-247AC Package Ou

PD- 91833CSMPS MOSFETIRFP22N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23 22A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curren

PD - 95006IRFP240PbF Lead-Free2/11/04Document Number: 91210 www.vishay.com1IRP240PbFwww.vishay.comDocument Number: 912102IRFP240PbFDocument Number: 91210 www.vishay.com3IRP240PbFDocument Number: 91210 www.vishay.com4IRFP240PbFDocument Number: 91210 www.vishay.com5IRP240PbFDocument Number: 91210 www.vishay.com6IRFP240PbFTO-247AC Package Outl

PD - 95007AIRFP250NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechni

Preliminary Data Sheet PD - 9.1251IRFP2410HEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating VDSS = 100VRepetitive Avalanche Rated175C Operating TemperatureRDS(on) = 0.025Fast SwitchingEase of ParallelingID = 61ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achi

PD - 94811IRFP264NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsS Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achi

PD - 94214IRFP264NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 60m Fully Avalanche Rated G Ease of ParallelingID = 44A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely l

PD - 94008IRFP250NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.075G Fully Avalanche Rated Ease of ParallelingID = 30AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

PD - 94230SMPS MOSFETIRFP23N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS)500V 0.190 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and

PD - 94900IRFP264PbF Lead-Freewww.irf.com 112/18/03IRFP264PbF2 www.irf.comIRFP264PbFwww.irf.com 3IRFP264PbF4 www.irf.comIRFP264PbFwww.irf.com 5IRFP264PbF6 www.irf.comIRFP264PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2

PD - 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

PD - 97550AUIRFP2907ZAUTOMOTIVE GRADEHEXFET Power MOSFETDFeaturesV(BR)DSS75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) max.4.5mG 175C Operating Temperature Fast SwitchingID170AS Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for

PD -93906AIRFP2907AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical ApplicationsD Integrated Starter AlternatorVDSS = 75V 42 Volts Automotive Electrical SystemsBenefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-ResistanceID = 209AV Dynamic dv/dt RatingS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxDescript

PD - 95478SMPS MOSFETIRFP21N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 270m 160ns 21A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

PD - 94004AIRFP260NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.04G Fully Avalanche Rated Ease of ParallelingID = 50AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

PD- 95915IRFP260PbF Lead-Free9/27/04Document Number: 91215 www.vishay.com1IRFP260PbFDocument Number: 91215 www.vishay.com2IRFP260PbFDocument Number: 91215 www.vishay.com3IRFP260PbFDocument Number: 91215 www.vishay.com4IRFP260PbFDocument Number: 91215 www.vishay.com5IRFP260PbFDocument Number: 91215 www.vishay.com6IRFP260PbFPeak Diode Recovery

PD -97692AAUTOMOTIVE GRADEAUIRFP2907HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.3.6ml Dynamic dV/dT Ratingl 175C Operating Temperaturemax 4.5mGl Fast SwitchingID (Silicon Limited)209Al Fully Avalanche RatedSID (Package Limited)90Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, R

PD - 94213IRFP254NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt Rating VDSS = 250V 175C Operating Temperature Fast SwitchingRDS(on) = 125m Fully Avalanche Rated G Ease of ParallelingID = 23A Simple Drive RequirementsSDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

PD - 95480BIRFP2907ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 90ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistan

PD - 96292IRFP250MPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

PD - 96420AUTOMOTIVE GRADEAUIRFP2602HEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 24V Low On-Resistance 175C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS CompliantID (Silicon Limited) 380A Automotive Qualified *SID (Package Limited) 180A Description

PD - 95008IRFP250PbF Lead-Freewww.irf.com 12/11/04IRFP250PbF2 www.irf.comIRFP250PbFwww.irf.com 3IRFP250PbF4 www.irf.comIRFP250PbFwww.irf.com 5IRFP250PbF6 www.irf.comIRFP250PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

PD - 95041IRFP254NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt Rating VDSS = 250Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 125ml Fully Avalanche Rated Gl Ease of ParallelingID = 23Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques

PD - 94503SMPS MOSFETIRFP21N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 270m 160ns 21A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate ch

PD -95050CIRFP2907PbFHEXFET Power MOSFETTypical ApplicationsD Telecom applications requiring soft startVDSS = 75VBenefitsRDS(on) = 4.5m Advanced Process TechnologyG Ultra Low On-Resistance Dynamic dv/dt RatingID = 209AS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design

PD - 95004IRFP22N50APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l UninterruptIble Power Supply 500V 0.23 22Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan

PD - 95005SMPS MOSFETIRFP22N60C3PbF Superjunction Power MOSFETAppIicationsl PFC and Primary Switch in SMPSl Uninterruptible Power SupplyVDSS@TJ max RDS(on) typ. IDl High Speed Power Switchingl Hard Switched and High Frequency Circuits650V 155m 22A l Lead-FreeBenefitsDl Ultra Low Gate Charge Qg results in Simple DriveRequirement l Improved Gate, Avalanche and Dy

PD - 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

PD - 94414IRFP22N60KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Hard Switching Primary or PFS Switch600V 240m 22Al Switch Mode Power Supply (SMPS)l Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Ruggednessl Full

PD - 95313IRFP244PbF Lead-Free6/1/04Document Number: 91211 www.vishay.com1IRFP244PbFDocument Number: 91211 www.vishay.com2IRFP244PbFDocument Number: 91211 www.vishay.com3IRFP244PbFDocument Number: 91211 www.vishay.com4IRFP244PbFDocument Number: 91211 www.vishay.com5IRFP244PbFDocument Number: 91211 www.vishay.com6IRFP244PbFTO-247AC Package Out

IRFP250N-CHANNEL 200V - 0.073 - 33A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRFP250 200V

November 2001IRFP254B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

IRFP21N60L, SiHFP21N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.27 Lower Gate Charge Results in Simple Drive RoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 46 Enhanced dV/dt Capabilities Offer Improved RuggednessQgd

IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon

IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl

IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

IRFP264N, SiHFP264NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.060 175 C Operating TemperatureRoHS*Qg (Max.) (nC) 210 Fast Switching COMPLIANTQgs (nC) 34 Fully Avalanche RatedQgd (nC) 94 Ease of ParallelingConfiguration Single Simple

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

IRFP240, SiHFP240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 70 Fast SwitchingQgs (nC) 13 Ease of ParallelingQgd (nC) 39 Simple Drive RequirementsConfiguration Single Compli

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

IRFP254, SiHFP254Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.14RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 71 Simple Drive RequirementsConfiguration Single Complia

IRFP254N, SiHFP254NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt RatingAvailableRDS(on) ()VGS = 10 V 0.125 175 C Operating TemperatureRoHS*COMPLIANTQg (Max.) (nC) 100 Fully Avalanche RatedQgs (nC) 17 Fast SwitchingQgd (nC) 44 Ease of Paralleling Simple Drive RequirementsCo

IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration

PD - 95008IRFP250PbF Lead-Freewww.irf.com 12/11/04IRFP250PbF2 www.irf.comIRFP250PbFwww.irf.com 3IRFP250PbF4 www.irf.comIRFP250PbFwww.irf.com 5IRFP250PbF6 www.irf.comIRFP250PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp

IRFP250, SiHFP250Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.085 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140COMPLIANT Fast SwitchingQgs (nC) 28 Ease of ParallelingQgd (nC) 74 Simple Drive RequirementsConfiguration Single Compli

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon

PD - 95007AIRFP250NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechni

PD - 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

PD - 95480BIRFP2907ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 90ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistan

PD - 96292IRFP250MPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDVDSS = 200Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.075Gl Ease of Parallelingl Simple Drive RequirementsID = 30Al Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

IRFP244, SiHFP244Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 39 Compliant to RoHS Directive 2002/95/ECConfiguration

PD -95050CIRFP2907PbFHEXFET Power MOSFETTypical ApplicationsD Telecom applications requiring soft startVDSS = 75VBenefitsRDS(on) = 4.5m Advanced Process TechnologyG Ultra Low On-Resistance Dynamic dv/dt RatingID = 209AS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design

IRFP22N50APbF HEXFET Power MOSFET ApplicationsDV 500V DSS Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply RDS(on) max 0.23 G High speed power switching I 22A D (Silicon Limited) SD Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness S Fully

PD - 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

IRFP244, IRFP245,SemiconductorIRFP246, IRFP24715A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,July 1998 N-Channel Power MOSFETsFeatures Description 15A and 14A, 275V and 250V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.28 and 0.34MOSFETs designed, tested, and guaranteed to withstand aspecified

iscN-Channel MOSFET Transistor IRFP264FEATURESLow drain-source on-resistance:RDS(ON) 75m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

iscN-Channel MOSFET Transistor IRFP22N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.23 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc N-Channel MOSFET Transistor IRFP252FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

isc N-Channel MOSFET Transistor IRFP255FEATURESDrain Current I = 21A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.17(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NPBFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP242R FEATURES Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.22(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250MIIRFP250MFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

iscN-Channel MOSFET Transistor IRFP250FEATURESLow drain-source on-resistance:RDS(ON) 85m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc N-Channel MOSFET Transistor IRFP256FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 275V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NIIRFP250NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260MIIRFP260MFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr

iscN-Channel MOSFET Transistor IRFP23N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.235 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP260NPBFFEATURESWith TO-247 packagingEase of parallelingHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc N-Channel MOSFET Transistor IRFP254AFEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

isc N-Channel MOSFET Transistor IRFP254FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

isc N-Channel MOSFET Transistor IRFP2907ZIIRFP2907ZFEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

isc N-Channel MOSFET Transistor IRFP2907IIRFP2907FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

isc N-Channel MOSFET Transistor IRFP253FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260NIIRFP260NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

iscN-Channel MOSFET Transistor IRFP260FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

iscN-Channel MOSFET Transistor IRFP21N60LFEATURESLow drain-source on-resistance:RDS(ON) =0.32 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

iscN-Channel MOSFET Transistor IRFP26N60LFEATURESLow drain-source on-resistance:RDS(ON) =0.25 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

iscN-Channel MOSFET Transistor IRFP22N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.28 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc N-Channel MOSFET Transistor IRFP257FEATURESDrain Current I = 21A@ T =25D CDrain Source Voltage-: V = 275V(Min)DSSStatic Drain-Source On-Resistance: R = 0.17(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies