IRFP2907ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP2907ZPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 310 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 90 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 180 nC
Время нарастания (tr): 140 ns
Выходная емкость (Cd): 970 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP2907ZPBF
IRFP2907ZPBF Datasheet (PDF)
irfp2907zpbf.pdf
PD - 95480BIRFP2907ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 90ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistan
irfp2907zpbf.pdf
PD - 95480BIRFP2907ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 90ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistan
auirfp2907z.pdf
PD - 97550AUIRFP2907ZAUTOMOTIVE GRADEHEXFET Power MOSFETDFeaturesV(BR)DSS75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) max.4.5mG 175C Operating Temperature Fast SwitchingID170AS Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for
irfp2907z.pdf
isc N-Channel MOSFET Transistor IRFP2907ZIIRFP2907ZFEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-
irfp2907.pdf
PD -93906AIRFP2907AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical ApplicationsD Integrated Starter AlternatorVDSS = 75V 42 Volts Automotive Electrical SystemsBenefits RDS(on) = 4.5m Advanced Process Technology G Ultra Low On-ResistanceID = 209AV Dynamic dv/dt RatingS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxDescript
auirfp2907.pdf
PD -97692AAUTOMOTIVE GRADEAUIRFP2907HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.3.6ml Dynamic dV/dT Ratingl 175C Operating Temperaturemax 4.5mGl Fast SwitchingID (Silicon Limited)209Al Fully Avalanche RatedSID (Package Limited)90Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, R
irfp2907pbf.pdf
PD -95050CIRFP2907PbFHEXFET Power MOSFETTypical ApplicationsD Telecom applications requiring soft startVDSS = 75VBenefitsRDS(on) = 4.5m Advanced Process TechnologyG Ultra Low On-Resistance Dynamic dv/dt RatingID = 209AS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design
irfp2907pbf.pdf
PD -95050CIRFP2907PbFHEXFET Power MOSFETTypical ApplicationsD Telecom applications requiring soft startVDSS = 75VBenefitsRDS(on) = 4.5m Advanced Process TechnologyG Ultra Low On-Resistance Dynamic dv/dt RatingID = 209AS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Stripe Planar design
irfp2907.pdf
isc N-Channel MOSFET Transistor IRFP2907IIRFP2907FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
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