Справочник MOSFET. IRFP32N50K

 

IRFP32N50K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP32N50K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 460 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 190 nC
   trⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 550 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFP32N50K

 

 

IRFP32N50K Datasheet (PDF)

 ..1. Size:202K  international rectifier
 irfp32n50kpbf.pdf

IRFP32N50K IRFP32N50K

PD - 95052IRFP32N50KPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsl Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. IDl Uninterruptible Power Supplyl High Speed Power Switching500V 0.135 32Al Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes

 ..2. Size:94K  international rectifier
 irfp32n50k.pdf

IRFP32N50K IRFP32N50K

PD - 94099AIRFP32N50KSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

 ..3. Size:175K  vishay
 irfp32n50k irfp32n50kpbf sihfp32n50k.pdf

IRFP32N50K IRFP32N50K

IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon

 ..4. Size:170K  vishay
 irfp32n50k sihfp32n50k.pdf

IRFP32N50K IRFP32N50K

IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon

 ..5. Size:260K  inchange semiconductor
 irfp32n50k.pdf

IRFP32N50K IRFP32N50K

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP32N50KFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 0.1. Size:115K  international rectifier
 irfp32n50ks.pdf

IRFP32N50K IRFP32N50K

PD - 94360IRFP32N50KSSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize

 8.1. Size:297K  international rectifier
 irfp3206pbf.pdf

IRFP32N50K IRFP32N50K

PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD

 8.2. Size:297K  infineon
 irfp3206pbf.pdf

IRFP32N50K IRFP32N50K

PD - 97127IRFP3206PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)200A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtD

 8.3. Size:242K  inchange semiconductor
 irfp3206.pdf

IRFP32N50K IRFP32N50K

isc N-Channel MOSFET Transistor IRFP3206IIRFP3206FEATURESStatic drain-source on-resistance:RDS(on)3.0mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc

 8.4. Size:260K  inchange semiconductor
 irfp3207z.pdf

IRFP32N50K IRFP32N50K

isc N-Channel MOSFET Transistor IRFP3207ZFEATURESDrain Current I = 170A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Speed Power SwitchingHard Switched and High Frequency

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