IRFP32N50KPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP32N50KPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 460 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 32 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 190 nC
Время нарастания (tr): 120 ns
Выходная емкость (Cd): 550 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.16 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFP32N50KPBF
IRFP32N50KPBF Datasheet (PDF)
irfp32n50kpbf.pdf
PD - 95052IRFP32N50KPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsl Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. IDl Uninterruptible Power Supplyl High Speed Power Switching500V 0.135 32Al Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes
irfp32n50k irfp32n50kpbf sihfp32n50k.pdf
IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon
irfp32n50ks.pdf
PD - 94360IRFP32N50KSSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize
irfp32n50k.pdf
PD - 94099AIRFP32N50KSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135 32A Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterize
irfp32n50k sihfp32n50k.pdf
IRFP32N50K, SiHFP32N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.135RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 190 COMPLIANTRuggednessQgs (nC) 59 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 84and CurrentCon
irfp32n50k.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP32N50KFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
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