Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

PD - 95006IRFP240PbF Lead-Free2/11/04Document Number: 91210 www.vishay.com1IRP240PbFwww.vishay.comDocument Number: 912102IRFP240PbFDocument Number: 91210 www.vishay.com3IRP240PbFDocument Number: 91210 www.vishay.com4IRFP240PbFDocument Number: 91210 www.vishay.com5IRP240PbFDocument Number: 91210 www.vishay.com6IRFP240PbFTO-247AC Package Outl

IRFP240, SiHFP240Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 70 Fast SwitchingQgs (nC) 13 Ease of ParallelingQgd (nC) 39 Simple Drive RequirementsConfiguration Single Compli

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP240R FEATURES Drain Current ID= 20A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT