IXTP32N65X MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTP32N65X
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 54 nC
trⓘ - Время нарастания: 49 ns
Cossⓘ - Выходная емкость: 1600 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IXTP32N65X
IXTP32N65X Datasheet (PDF)
ixth32n65x ixtp32n65x ixtq32n65x.pdf
Preliminary Technical InformationX-Class VDSS = 650VIXTP32N65XPower MOSFET ID25 = 32AIXTQ32N65X RDS(on) 135m IXTH32N65XN-Channel Enhancement ModeTO-220AB (IXTP)GD TabSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGVGSS Continuous 30 V
ixtp32n65xm.pdf
Preliminary Technical InformationX-Class VDSS = 650VIXTP32N65XMPower MOSFET ID25 = 14A RDS(on) 135m N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGDVDGR TJ = 25C to 150C, RGS = 1M 650 VSVGSS Continuous 30 VG = Gate D = DrainVGSM Transient 40 VS = S
ixta3n50p ixtp3n50p ixty3n50p.pdf
IXTA 3N50P VDSS = 500 VPolarHVTMIXTP 3N50P ID25 = 3.6 APower MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS 30 VVGSM 40 V(TAB)GDSID25 TC = 25 C 3.6 AIDM
ixta3n50d2-ixtp3n50d2.pdf
Depletion Mode VDSX = 500VIXTA3N50D2MOSFET ID(on) > 3AIXTP3N50D2 RDS(on) 1.5 N-ChannelTO-263 AA (IXTA)GSymbol Test Conditions Maximum RatingsSVDSX TJ = 25C to 150C 500 VD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C 125 WTJ - 55 ... +150 CTJM 150 CTstg - 55 ... +150 CGDD (Tab)
ixta3n120 ixtp3n120.pdf
VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =
ixta36n30p ixtp36n30p ixtq36n30p.pdf
IXTA 36N30P VDSS = 300 VPolarHTTMIXTP 36N30P ID25 = 36 APower MOSFET IXTQ 36N30P RDS(on) 110 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VSD(TAB)VGS Continuous 30 VVGSM Transient 40 VTO-220
ixta3n100p ixth3n100p ixtp3n100p.pdf
IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)
ixta3n120 ixtp3n120 ixth3n120.pdf
High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous
ixtp34n65x2 ixth34n65x2.pdf
X2-Class VDSS = 650VIXTP34N65X2Power MOSFET ID25 = 34AIXTH34N65X2 RDS(on) 96m N-Channel Enhancement ModeAvalanche RatedTO-220(IXTP)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 V DSD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 650 VTO-247VGSS Continuous 30 V(IXTH)VGSM Transient 40 VID
ixta3n60p ixtp3n60p ixty3n60p.pdf
IXTA 3N60PVDSS = 600 VPolarHVTMIXTP 3N60PID25 = 3.0 APower MOSFETIXTY 3N60P RDS(on) 2.9 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 T
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918