IXTA8N65X2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTA8N65X2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 28 ns
Выходная емкость (Cd): 495 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.5 Ohm
Тип корпуса: TO-263
Аналог (замена) для IXTA8N65X2
IXTA8N65X2 Datasheet (PDF)
ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf
Preliminary Technical InformationX2-Class VDSS = 650VIXTY8N65X2Power MOSFET ID25 = 8AIXTA8N65X2 RDS(on) 500m IXTP8N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG
ixta8n50p ixtp8n50p.pdf
IXTA 8N50P VDSS = 500 VPolarHVTMIXTP 8N50P ID25 = 8 APower MOSFET RDS(on) 0.8 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25 C8 AIDM
ixta80n10t ixtp80n10t.pdf
TrenchMVTM VDSS = 100VIXTA80N10TPower MOSFET ID25 = 80AIXTP80N10T RDS(on) 14m N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-220AB (IXTP)VGSS Continuous 20 VVGSM Transien
ixta88n085t7.pdf
Preliminary Technical InformationVDSS = 85 VIXTA88N085T7TrenchMVTMID25 = 88 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25C88 A 7IDM
ixta80n10t7.pdf
Preliminary Technical InformationVDSS = 100 VIXTA80N10T7TrenchMVTMID25 = 80 APower MOSFET RDS(on) 14 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V1ID25 TC = 25C80 A 7I
ixta88n085t ixtp88n085t.pdf
Preliminary Technical InformationIXTA88N085T VDSS = 85 VTrenchMVTMIXTP88N085T ID25 = 88 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 TC =
ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf
Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25
ixta80n075l2.pdf
isc N-Channel MOSFET Transistor IXTA80N075L2FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRFB7434PBF
