IXTA80N075L2 - описание и поиск аналогов

 ..1. Size:168K  ixys
 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf 

Advance Technical Information LinearL2TM Power VDSS = 75V IXTA80N075L2 MOSFETs w/Extended ID25 = 80A IXTP80N075L2 RDS(on) 24m FBSOA IXTH80N075L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 75 V VDGR TJ = 25

 ..2. Size:252K  inchange semiconductor
 ixta80n075l2.pdf 

isc N-Channel MOSFET Transistor IXTA80N075L2 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 7.1. Size:184K  ixys
 ixta80n10t ixtp80n10t.pdf 

TrenchMVTM VDSS = 100V IXTA80N10T Power MOSFET ID25 = 80A IXTP80N10T RDS(on) 14m N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C, RGS = 1M 100 V TO-220AB (IXTP) VGSS Continuous 20 V VGSM Transien

 7.2. Size:163K  ixys
 ixta80n10t7.pdf 

Preliminary Technical Information VDSS = 100 V IXTA80N10T7 TrenchMVTM ID25 = 80 A Power MOSFET RDS(on) 14 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V 1 ID25 TC = 25 C80 A 7 I

 9.1. Size:238K  ixys
 ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf 

Preliminary Technical Information X2-Class VDSS = 650V IXTY8N65X2 Power MOSFET ID25 = 8A IXTA8N65X2 RDS(on) 500m IXTP8N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G

 9.2. Size:165K  ixys
 ixta88n085t7.pdf 

Preliminary Technical Information VDSS = 85 V IXTA88N085T7 TrenchMVTM ID25 = 88 A Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25 C88 A 7 IDM

 9.3. Size:229K  ixys
 ixta8n50p ixtp8n50p.pdf 

IXTA 8N50P VDSS = 500 V PolarHVTM IXTP 8N50P ID25 = 8 A Power MOSFET RDS(on) 0.8 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C8 A IDM

 9.4. Size:217K  ixys
 ixta88n085t ixtp88n085t.pdf 

Preliminary Technical Information IXTA88N085T VDSS = 85 V TrenchMVTM IXTP88N085T ID25 = 88 A Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 TC =