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IXFT44N50Q3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXFT44N50Q3
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 830 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 6.5 V
   Максимально допустимый постоянный ток стока |Id|: 44 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 93 nC
   Время нарастания (tr): 13 ns
   Выходная емкость (Cd): 625 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.14 Ohm
   Тип корпуса: TO-268

 Аналог (замена) для IXFT44N50Q3

 

 

IXFT44N50Q3 Datasheet (PDF)

 ..1. Size:509K  ixys
 ixft44n50q3.pdf

IXFT44N50Q3

Reduce The Size of Your High Power Design1000V Q3-Class HiPerFETTM Power MOSFET in SMPD Package TechnologyQ3-Class HiPerFETTM Features: Low Rdson & Qg Low Intrinsic Gate Resistance Fast Intrinsic Rectifier Excellent dV/dt Performance High Avalanche Energy Capabilities SMPD Package Features: High Speed Switching Capabilities Compact, Ultra-low Package Pr

 5.1. Size:296K  ixys
 ixfh44n50p ixfk44n50p ixft44n50p.pdf

IXFT44N50Q3 IXFT44N50Q3

IXFH 44N50P VDSS = 500 VPolarHVTM HiPerFETIXFK 44N50P ID25 = 44 APower MOSFETIXFT 44N50P RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS = 1 M 500

 9.1. Size:265K  ixys
 ixft40n85xhv ixfh40n85x.pdf

IXFT44N50Q3 IXFT44N50Q3

Advance Technical InformationX-Class HiPerFETTM VDSS = 850VIXFT40N85XHVPower MOSFET ID25 = 40AIXFH40N85X RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXFT)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-

 9.2. Size:87K  ixys
 ixfh4n100q ixft4n100q.pdf

IXFT44N50Q3 IXFT44N50Q3

IXFH 4N100Q VDSS = 1000 VHiPerFETTMIXFT 4N100Q ID25 = 4 APower MOSFETsRDS(on) = 3.0 WQ-Classtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 MW 1000 VVGS Continuous 20 VG(TAB)DVGSM Transient

 9.3. Size:127K  ixys
 ixfh42n50p2 ixft42n50p2.pdf

IXFT44N50Q3 IXFT44N50Q3

Advance Technical InformationPolarP2TM HiperFETTM VDSS = 500VIXFH42N50P2ID25 = 42APower MOSFETIXFT42N50P2 RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GDSymbol Test Conditions Maximum Ratings D (Tab)SVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VTO-268 (IXF

 9.4. Size:122K  ixys
 ixft40n50q.pdf

IXFT44N50Q3 IXFT44N50Q3

Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500

 9.5. Size:172K  ixys
 ixfh46n30t ixft46n30t.pdf

IXFT44N50Q3 IXFT44N50Q3

Advance Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFH46N30TPower MOSFET ID25 = 46AIXFT46N30T RDS(on) 80m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 V DD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 300 VVG

 9.6. Size:50K  ixys
 ixfh40n30q ixft40n30q.pdf

IXFT44N50Q3 IXFT44N50Q3

IXFH 40N30QHiPerFETTMVDSS = 300 VIXFT 40N30QPower MOSFETs ID25 = 40 AQ-Class RDS(on) = 80 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetTO-268 (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuous 20 VG(TAB)VGSM Transie

 9.7. Size:123K  ixys
 ixfh40n50q ixft40n50q.pdf

IXFT44N50Q3 IXFT44N50Q3

Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500

 9.8. Size:188K  ixys
 ixfh400n075t2-ixft400n075t2.pdf

IXFT44N50Q3 IXFT44N50Q3

Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 75VIXFH400N075T2ID25 = 400APower MOSFETIXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSS Con

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