IXFH70N30Q3 - описание и поиск аналогов

Advance Technical Information HiperFETTM VDSS = 300V IXFT70N30Q3 Power MOSFETs ID25 = 70A IXFH70N30Q3 Q3-Class RDS(on) 54m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V TO-247 (IXFH) VDGR TJ = 25 C to 150 C, RGS = 1M 300

Advanced Technical Information IXFH 70N15 VDSS = 150 V HiPerFETTM IXFT 70N15 ID25 = 70 A Power MOSFETs RDS(on) = 28 mW trr 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 150 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID2

Advanced Technical Information IXFH 75N10Q VDSS = 100 V HiPerFETTM IXFT 75N10Q ID25 = 75 A Power MOSFETs RDS(on) = 20 mW Q-Class t 200ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V VGS Continuous

VDSS ID25 RDS(on) HiPerFETTM IXFH 76 N06-11 60 V 76 A 11 mW Power MOSFETs IXFH 76 N06-12 60 V 76 A 12 mW IXFH 76 N07-11 70 V 76 A 11 mW N-Channel Enhancement Mode IXFH 76 N07-12 70 V 76 A 12 mW High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 175 C N06 60 V N07 70 V VDGR TJ = 25 C to 175 C; RGS = 10 k

PolarHTTM Power VDSS = 200V IXFV74N20P ID25 = 74A MOSFET HiPerFETTM IXFV74N20PS RDS(on) 34m IXFH74N20P trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 175 C 200 V S D (TAB) VDGR TJ = 25 C to 175 C, RGS = 1M 200

Polar TM HiPerFETTM VDSS = 1000V IXFA7N100P Power MOSFETs ID25 = 7A IXFP7N100P RDS(on) 1.9 IXFH7N100P N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Conti

TrenchT2TM HiperFETTM VDSS = 150V IXFA76N15T2 ID25 = 76A Power MOSFET IXFP76N15T2 RDS(on) 22m IXFH76N15T2 TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C, RGS = 1M 150 V

HiPerFETTM IXFH 7 N80 VDSS = 800 V Power MOSFETs IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W N-Channel Enhancement Mode trr = 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C7 A TO-204 AA (IXFM

www.DataSheet.co.kr Advanced Technical Information IXFH 7N90Q VDSS = 900 V HiPerFETTM IXFT 7N90Q ID25 = 7 A Power MOSFETs RDS(on) = 1.5 W Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V VGSM