IPW65R310CFD - описание и поиск аналогов

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R310CFD Data Sheet Rev. 2.3 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R310CFD , IPB65R310CFD , IPP65R310CFD IPA65R310CFD , IPI65R310CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage

isc N-Channel MOSFET Transistor IPW65R310CFD IIPW65R310CFD FEATURES Static drain-source on-resistance RDS(on) 310m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R420CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R420CFD , IPB65R420CFD , IPP65R420CFD IPA65R420CFD , IPD65R420CFD , IPI65R420CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology f

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R190C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R150CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R150CFDA, IPB65R150CFDA IPP65R150CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R150CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R150CFDA, IPB65R150CFDA IPP65R150CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/

MOSFET +

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPW65R037C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R037C6 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS CFD Power Transistor IPW65R080CFD 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage

MOSFET +

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS C6 CFD Power Transistor TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology fo

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R019C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R019C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R070C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R190CFD Data Sheet Rev. 2.7 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R110CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R110CFDA, IPB65R110CFDA IPP65R110CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPW65R080CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R080CFDA TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPW65R041CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R041CFD TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R045C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R045C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R110CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R110CFDA, IPB65R110CFDA IPP65R110CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R065C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R065C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R095C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R125C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R125C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C D D t eet e 4 Rev. 2.6 in l Power Management & Multimarket In ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C D I 4 C D I D 4 C D I I 4 C D O 47 D O 1 Descripti n C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin i

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

isc N-Channel MOSFET Transistor IPW65R190C7 IIPW65R190C7 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R190CFD IIPW65R190CFD FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS

isc N-Channel MOSFET Transistor IPW65R190E6 IIPW65R190E6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R150CFD IIPW65R150CFD FEATURES Static drain-source on-resistance RDS(on) 150m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS

isc N-Channel MOSFET Transistor IPW65R420CFD IIPW65R420CFD FEATURES Static drain-source on-resistance RDS(on) 420m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS

isc N-Channel MOSFET Transistor IPW65R280E6 IIPW65R280E6 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R037C6 IIPW65R037C6 FEATURES Static drain-source on-resistance RDS(on) 37m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R080CFD IIPW65R080CFD FEATURES Static drain-source on-resistance RDS(on) 80m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R099C6 IIPW65R099C6 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R110CFD IIPW65R110CFD FEATURES Static drain-source on-resistance RDS(on) 110m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for resonant Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

isc N-Channel MOSFET Transistor IPW65R280C6 IIPW65R280C6 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R070C6 IIPW65R070C6 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R660CFD IIPW65R660CFD FEATURES Static drain-source on-resistance RDS(on) 660m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS

isc N-Channel MOSFET Transistor IPW65R041CFD IIPW65R041CFD FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R045C7 IIPW65R045C7 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R065C7 IIPW65R065C7 FEATURES Static drain-source on-resistance RDS(on) 65m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R095C7 IIPW65R095C7 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R125C7 IIPW65R125C7 FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

isc N-Channel MOSFET Transistor IPW65R048CFDA FEATURES Drain Current I = 63.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.048 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch a