Справочник MOSFET. IPW65R150CFD

 

IPW65R150CFD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPW65R150CFD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 195.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7.6 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: TO-247
     - подбор MOSFET транзистора по параметрам

 

IPW65R150CFD Datasheet (PDF)

 ..1. Size:3773K  infineon
 ipa65r150cfd ipb65r150cfd ipi65r150cfd ipp65r150cfd ipw65r150cfd.pdf pdf_icon

IPW65R150CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 ..2. Size:3818K  infineon
 ipw65r150cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf pdf_icon

IPW65R150CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 ..3. Size:241K  inchange semiconductor
 ipw65r150cfd.pdf pdf_icon

IPW65R150CFD

isc N-Channel MOSFET Transistor IPW65R150CFDIIPW65R150CFDFEATURESStatic drain-source on-resistance:RDS(on)150mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDS

 0.1. Size:2173K  infineon
 ipb65r150cfda ipp65r150cfda ipw65r150cfda.pdf pdf_icon

IPW65R150CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R150CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R150CFDA, IPB65R150CFDAIPP65R150CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the sup

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