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IPW65R110CFDA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPW65R110CFDA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 277.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для IPW65R110CFDA

 

 

IPW65R110CFDA Datasheet (PDF)

 ..1. Size:2288K  infineon
ipb65r110cfda ipp65r110cfda ipw65r110cfda.pdf

IPW65R110CFDA
IPW65R110CFDA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

 ..2. Size:2324K  infineon
ipw65r110cfda ipb65r110cfda ipp65r110cfda.pdf

IPW65R110CFDA
IPW65R110CFDA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

 2.1. Size:3853K  infineon
ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf

IPW65R110CFDA
IPW65R110CFDA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 2.2. Size:3828K  infineon
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf

IPW65R110CFDA
IPW65R110CFDA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 2.3. Size:242K  inchange semiconductor
ipw65r110cfd.pdf

IPW65R110CFDA
IPW65R110CFDA

isc N-Channel MOSFET Transistor IPW65R110CFDIIPW65R110CFDFEATURESStatic drain-source on-resistance:RDS(on)110mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for resonant SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

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