Справочник MOSFET. IPW65R045C7

 

IPW65R045C7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPW65R045C7
   Маркировка: 65C7045
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 227 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 93 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для IPW65R045C7

 

 

IPW65R045C7 Datasheet (PDF)

 ..1. Size:1960K  infineon
 ipw65r045c7.pdf

IPW65R045C7 IPW65R045C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R045C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

 ..2. Size:242K  inchange semiconductor
 ipw65r045c7.pdf

IPW65R045C7 IPW65R045C7

isc N-Channel MOSFET Transistor IPW65R045C7IIPW65R045C7FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 6.1. Size:1095K  infineon
 ipw65r041cfd.pdf

IPW65R045C7 IPW65R045C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPW65R041CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R041CFDTO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a

 6.2. Size:870K  infineon
 ipw65r048cfda.pdf

IPW65R045C7 IPW65R045C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPW65R048CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R048CFDATO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by

 6.3. Size:242K  inchange semiconductor
 ipw65r041cfd.pdf

IPW65R045C7 IPW65R045C7

isc N-Channel MOSFET Transistor IPW65R041CFDIIPW65R041CFDFEATURESStatic drain-source on-resistance:RDS(on)41mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 6.4. Size:331K  inchange semiconductor
 ipw65r048cfda.pdf

IPW65R045C7 IPW65R045C7

isc N-Channel MOSFET Transistor IPW65R048CFDAFEATURESDrain Current : I = 63.3A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.048(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switcha

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