IPW65R045C7. Аналоги и основные параметры
Наименование производителя: IPW65R045C7
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 46 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 70 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: TO-247
Аналог (замена) для IPW65R045C7
- подборⓘ MOSFET транзистора по параметрам
IPW65R045C7 даташит
ipw65r045c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R045C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R045C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion
ipw65r045c7.pdf
isc N-Channel MOSFET Transistor IPW65R045C7 IIPW65R045C7 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS
ipw65r041cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPW65R041CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R041CFD TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a
ipw65r048cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R048CFDA TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
Другие IGBT... IPW65R125C7, IPW65R110CFDA, IPW65R110CFD, IPW65R099C6, IPW65R095C7, IPW65R080CFDA, IPW65R065C7, IPW65R048CFDA, IRFP260N, IPW65R041CFD, IPW65R037C6, IPW65R019C7, IPW60R330P6, IPW60R280P6, IPW60R230P6, IPW60R190P6, IPW60R180C7
History: AOSD26313C
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT
Popular searches
tip31cg | s9015 transistor | irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250



