IPW65R045C7 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPW65R045C7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 46 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 70 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: TO-247
Аналог (замена) для IPW65R045C7
IPW65R045C7 Datasheet (PDF)
ipw65r045c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R045C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion
ipw65r045c7.pdf

isc N-Channel MOSFET Transistor IPW65R045C7IIPW65R045C7FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS
ipw65r041cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPW65R041CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R041CFDTO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a
ipw65r048cfda.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPW65R048CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R048CFDATO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by
Другие MOSFET... IPW65R125C7 , IPW65R110CFDA , IPW65R110CFD , IPW65R099C6 , IPW65R095C7 , IPW65R080CFDA , IPW65R065C7 , IPW65R048CFDA , 10N60 , IPW65R041CFD , IPW65R037C6 , IPW65R019C7 , IPW60R330P6 , IPW60R280P6 , IPW60R230P6 , IPW60R190P6 , IPW60R180C7 .
History: FS10KM-10 | UT3N10G-AG6-R | APT5014LVFRG | AO4916 | 2SK4027 | NCEAP40ND60AG
History: FS10KM-10 | UT3N10G-AG6-R | APT5014LVFRG | AO4916 | 2SK4027 | NCEAP40ND60AG



Список транзисторов
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