IPW65R041CFD Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPW65R041CFD
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 68.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 28 ns
Cossⓘ - Выходная емкость: 400 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.041 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
IPW65R041CFD Datasheet (PDF)
ipw65r041cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPW65R041CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R041CFDTO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a
ipw65r041cfd.pdf

isc N-Channel MOSFET Transistor IPW65R041CFDIIPW65R041CFDFEATURESStatic drain-source on-resistance:RDS(on)41mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS
ipw65r045c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R045C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion
ipw65r048cfda.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPW65R048CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R048CFDATO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by
Другие MOSFET... IPW65R110CFDA , IPW65R110CFD , IPW65R099C6 , IPW65R095C7 , IPW65R080CFDA , IPW65R065C7 , IPW65R048CFDA , IPW65R045C7 , AON6414A , IPW65R037C6 , IPW65R019C7 , IPW60R330P6 , IPW60R280P6 , IPW60R230P6 , IPW60R190P6 , IPW60R180C7 , IPW60R160P6 .
History: SI9945BDY | NVTFS002N04C
History: SI9945BDY | NVTFS002N04C



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