Справочник MOSFET. IPW60R099C7

 

IPW60R099C7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPW60R099C7
   Маркировка: 60C7099
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 33 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для IPW60R099C7

 

 

IPW60R099C7 Datasheet (PDF)

 ..1. Size:1541K  infineon
 ipw60r099c7.pdf

IPW60R099C7 IPW60R099C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R099C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp

 ..2. Size:243K  inchange semiconductor
 ipw60r099c7.pdf

IPW60R099C7 IPW60R099C7

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099C7IIPW60R099C7FEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

 4.1. Size:378K  infineon
 ipw60r099cpa.pdf

IPW60R099C7 IPW60R099C7

IPW60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt ratedPG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for Aut

 4.2. Size:644K  infineon
 ipw60r099cp.pdf

IPW60R099C7 IPW60R099C7

IPW60R099CPTMCIMOSTM #:A0INV . J6A>;>:9 688DG9>CC6CIPGTO247 1V 2 AIG6 ADL

 4.3. Size:1385K  infineon
 ipw60r099c6.pdf

IPW60R099C7 IPW60R099C7

MOSFET+ =L9D - PA

 4.4. Size:2087K  infineon
 ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

IPW60R099C7 IPW60R099C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

 4.5. Size:243K  inchange semiconductor
 ipw60r099cp.pdf

IPW60R099C7 IPW60R099C7

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R099CPIIPW60R099CPFEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top