IPW60R041P6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPW60R041P6
Маркировка: 6R041P6
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 481 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 77.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 170 nC
Время нарастания (tr): 27 ns
Выходная емкость (Cd): 310 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.041 Ohm
Тип корпуса: TO-247
Аналог (замена) для IPW60R041P6
IPW60R041P6 Datasheet (PDF)
ipw60r041p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPW60R041P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R041P6TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion
ipw60r041p6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R041P6IIPW60R041P6FEATURESStatic drain-source on-resistance:RDS(on)41mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
ipw60r041c6.pdf
isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6FEATURESStatic drain-source on-resistance:RDS(on)41mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV
ipw60r045cpa.pdf
IPW60R045CPACoolMOS Power TransistorProduct SummaryV 600 VDSR 0.045DS(on),maxQ 150 nCg,typFeatures Worldwide best R in TO247ds,on Ultra low gate chargePG-TO247-3 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for A
ipw60r040c7.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPW60R040C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPW60R040C7TO-2471 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipw60r040cfd7.pdf
IPW60R040CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s
ipw60r045p7.pdf
IPW60R045P7MOSFETPG-TO 247-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS
ipw60r045cp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CPFEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipw60r040c7.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R040C7IIPW60R040C7FEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
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