IPU60R2K0C6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPU60R2K0C6
Маркировка: 6R2K0C6
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 22.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 12 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: TO-251
Аналог (замена) для IPU60R2K0C6
IPU60R2K0C6 Datasheet (PDF)
ipu60r2k0c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R2K0C6Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R2K0C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer
ipu60r2k0c6.pdf
isc N-Channel MOSFET Transistor IPU60R2K0C6FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipd60r2k1ce ipu60r2k1ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R2K1CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R2K1CE, IPU60R2K1CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipu60r2k1ce.pdf
isc N-Channel MOSFET Transistor IPU60R2K1CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipd60r1k0ce ipu60r1k0ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K0CE, IPU60R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd60r1k5ce ipu60r1k5ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K5CE, IPU60R1K5CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipu60r950c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R950C6Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R950C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer
ipu60r600c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R600C6 Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R600C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee
ipu60r1k4c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R1K4C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer
ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf
IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CEMOSFETDPAK IPAK IPAK SL600V CoolMOS CE Power TransistortabtabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitivea
ipu60r950c6.pdf
isc N-Channel MOSFET Transistor IPU60R950C6FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r600c6.pdf
isc N-Channel MOSFET Transistor IPU60R600C6FEATURESDrain Source Voltage-: V = 600V(Min)DSSLow On-Resistance: R = 600m(Max)DS(on)100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r1k4c6.pdf
isc N-Channel MOSFET Transistor IPU60R1K4C6FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r1k0ce.pdf
isc N-Channel MOSFET Transistor IPU60R1K0CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r3k4ce.pdf
isc N-Channel MOSFET Transistor IPU60R3K4CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r1k5ce.pdf
isc N-Channel MOSFET Transistor IPU60R1K5CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SDF120NA20JD
History: SDF120NA20JD
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918