IRFP351 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP351
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 350 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 73 nC
trⓘ - Время нарастания: 65(max) ns
Cossⓘ - Выходная емкость: 390 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO3P
IRFP351 Datasheet (PDF)
irfp350 irfp351 irfp352 irfp353.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
irfp351.pdf
isc N-Channel MOSFET Transistor IRFP351FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
irfp351r.pdf
INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP351(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
irfp354pbf.pdf
PD- 95715IRFP354PbF Lead-Freewww.irf.com 18/3/04IRFP354PbF2 www.irf.comIRFP354PbFwww.irf.com 3IRFP354PbF4 www.irf.comIRFP354PbFwww.irf.com 5IRFP354PbF6 www.irf.comIRFP354PbFwww.irf.com 7IRFP354PbFTO-247AC Package Outline Dimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH ASSEMBLY PART
irfp350lcpbf.pdf
PD- 95714IRFP350LCPbF Lead-Free08/03/04Document Number: 91224 www.vishay.com1Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com2Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com3Downloaded from Elcodis.com electronic components distributor
irfp350lc.pdf
PD - 9.1229IRFP350LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 400VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.30Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfp350.pdf
PD - 94877IRFP350PbF Lead-Free12/9/03Document Number: 91225 www.vishay.com1IRFP350PbFDocument Number: 91225 www.vishay.com2IRFP350PbFDocument Number: 91225 www.vishay.com3IRFP350PbFDocument Number: 91225 www.vishay.com4IRFP350PbFDocument Number: 91225 www.vishay.com5IRFP350PbFDocument Number: 91225 www.vishay.com6IRFP350PbFTO-247AC Package Ou
irfp350a.pdf
IRFP350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characterist
irfp350-353.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
irfp350a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
irfp350pbf.pdf
IRFP350, SiHFP350Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead
irfp350 sihfp350.pdf
IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli
irfp350lc sihfp350lc.pdf
IRFP350LC, SiHFP350LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.30 Enhanced 30V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 76 Isolated Central Mounting HoleQgs (nC) 20 Dynamic dV/dt RatedQgd (nC) 37 Repetitive Av
irfp350 sihfp350.pdf
IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli
irfp353.pdf
isc N-Channel MOSFET Transistor IRFP353FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
irfp352r.pdf
INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP352(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
irfp350a.pdf
isc N-Channel MOSFET Transistor IRFP350AFEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
irfp353r.pdf
INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP353(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
irfp350lc.pdf
isc N-Channel MOSFET ransistor IRFP350LCFEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
irfp352.pdf
isc N-Channel MOSFET Transistor IRFP352FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
irfp350r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES Drain Current ID= 16A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.3(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI
irfp350.pdf
isc N-Channel MOSFET ransistor IRFP350FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies an
Другие MOSFET... IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRF1010E , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 .
History: IRF5305 | IRFD24N | 40600 | 2N6659 | HQB7N65C | IRCZ14
History: IRF5305 | IRFD24N | 40600 | 2N6659 | HQB7N65C | IRCZ14
Список транзисторов
Обновления
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